DIODS BS850 Datasheet

Features

High Input Impedance

·

Fast Switching Speed

·

CMOS Logic Compatible Input

·

No Thermal Runaway or Secondary

·

Breakdown
Surface Mount Package Ideally Suited

·

for Automatic Assembly

Mechanical Data

Case: SOT-23, Plastic

·

Terminals: Solderable per MIL-STD-202

·

Method 208
Pin Connection: See Diagram

·

Marking: S50

·

Weight: 0.008 grams (approx.)

·

BS850

P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

DISCONTINUED,

FOR NEW DESIGN

USE BSS84

A

D

TOP VIEW

E

D

G

H

B

C

SG

K

J

L

M

SOT-23

Dim Min Max

A

0.37 0.51

B

1.19 1.40

C

2.10 2.50

D

0.89 1.05

E

0.45 0.61

G

1.78 2.05

H

2.65 3.05

J

0.013 0.15

K

0.89 1.10

L

0.45 0.61

M

0.076 0.178

All Dimensions in mm

Maximum Ratings

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage (pulsed)

Drain Current (continuous)

Power Dissipation @TC= 25°C (Note 1)

Operating and Storage Temperature Range

Inverse Diode

Maximum Forward Current (continuous)

Forward Voltage Drop (typ.) @ VGS= 0, IF= 0.12A, Tj= 25°C

Notes: 1. Device mounted on Ceramic Substrate 0.7mm; 2.5 cm2area.

@ TA= 25°C unless otherwise specified

Characteristic Symbol Value Unit

@ TA= 25°C unless otherwise specified

Characteristic Symbol Value Unit

–V

–V

V

–I

P

T

j,TSTG

DSS

DGS

GS

I

V

60 V

60 V

±20 V

D

d

F

F

250 mA

310 mW

-65 to+150 °C

0.30 A

0.85 V

DS11402 Rev. F-3 1 of 3 BS850

Electrical Characteristics

@ TA= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage Current

Drain-Source Cutoff Current

Drain-Source ON Resistance

Thermal Resistance, Junction to Ambient Air

Thermal Resistance Junction to
Substrate Backside

Forward Transconductance

Input Capacitance

Switching Times
Turn On Time
Turn Off Time

-V

(BR)DSS

V

-I

-I

r

DS (ON)

R

R

GS(th)

GSS

DSS

qJA

qJSB

g

FS

C

iss

t

on

t

off

Notes: 1. Device mounted on ceramic substrate 0.7mm; 2.5 cm2area.

60 90 — V

— 1.0 3.0 V

— — 10 nA

— — 0.5 µA

— 3.5 5.0 W

— — 400 K/W

— — 320 K/W

— 200 — mm

—60—pF

5.0

—

25

—ns

= 100µA, VGS= 0

-I

D

-V

GS=VDS

-V

GS

-V

DS

-V

GS

, –ID= 1.0mA

= 15V, VDS= 0

= 25V, VGS= 0

= 10V, –ID= 0.2A

Note 1

Note 1

= 10V, –ID= 0.2A,

-V

DS

f = 1.0MHz

= 10V, VGS=0, f = 1.0MHz

-V

DS

= 10V, –VDS= 10V,

-V

GS

R

= 100W

D

DISCONTINUED,

FOR NEW DESIGN

USE BSS84

DS11402 Rev. F-3 2 of 3 BS850