DIODS BS817 Datasheet

Features

High Breakdown Voltage

·

High Input Impedance

·

Fast Switching Speed

·

Specially Suited for Telephone Subsets

·

Ideal for Automated Surface Mount Assembly

·

Mechanical Data

Case: SOT-23, Plastic

·

Terminals: Solderable per MIL-STD-202,

·

Method 208
Terminal Connections (see Diagram)

·

Marking: S17

·

Weight: 0.008 grams (approx.)

·

BS817

P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

SOT-23

Dim Min Max

A

0.37 0.51

B

1.19 1.40

C

2.10 2.50

D

0.89 1.05

E

0.45 0.61

G

1.78 2.05

H

2.65 3.05

J

0.013 0.15

M

K

0.89 1.10

L

0.45 0.61

M

0.076 0.178

All Dimensions in mm

E

D

TOP VIEW

D

G

H

A

B

C

SG

K

J

L

Maximum Ratings

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage (pulsed) (Note 2)

Drain Current (continuous)

Power Dissipation @ T

Operating and Storage Temperature Range

Inverse Diode

Max Forward Current (continuous)

Forward Voltage Drop (typical)
@V

= 0, IF= 0.3A, Tj= 25°C

GS

Notes: 1. Device mounted on Ceramic Substrate 0.7mm x 2.5cm2area.

2. Pulse Test: Pulse width = 80µs, duty cycle = 1%.

@ TA= 25°C unless otherwise specified

@ TA= 25°C unless otherwise specified

Characteristic Symbol Value Unit

C = 50°C (Note 1)

T

Characteristic Symbol Value Unit

-V

DSS

-V

DGS

V

GS

-I

D

Pd 310 mW

j,TSTG

I

F

V

F

200 V

200 V

±20 V

100 mA

-55 to +150 °C

0.3 A

0.85 V

DS11401 Rev. D-3 1 of 2 BS817

Electrical Characteristics

O

O

O

O

e

@ TA= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Drain-Source Breakdown Voltage

Gate-Body Leakage Current

Drain-Source Cutoff Current

Gate-Source Threshold Voltage

Drain-Source ON Resistance

Thermal Resistance, Junction to Substrate Backside

Thermal Resistance, Junction to Ambient Air

Input Capacitance
Output Capacitance
Feedback Capacitance

Switching Times
Turn-On Time
Turn-Off Time

-V

(BR)DSS

-I

-I

-I

-V

r

DS(ON)

R

R

GSS

DSS
DSX

GS(th)

qJSB

qJA

C

iss

C

oss

C

rss

t

ON

t

OFF

Notes: 1. Device mounted on ceramic substrate 0.7mm x 2.5 cm2area.

2. Pulse test: Pulse width = 80µs, duty cycle = 1%.

nA
µA

-I

D

-V

-V

-V

-V

-V

Note 1

200 230 — V

— — 10 nA

——

30

1.0

— 2.8 3.5 V

—3050W

— — 320 K/W

— — 400 K/W Note 1

—

—

58

8.0

1.5

5.0
15

—pF

—

ns

-V

f = 1.0MHz

-V
R

= 100µA, VGS= 0

= 15V, VDS= 0

GS

= 130V, VGS= 0

DS

= 70V, -VGS= 0.2V

DS

GS=VDS

GS

DS

GS
D

, -ID= 1.0mA

= 2.8V, -ID= 20mA

= 20V, VGS= 0,

= 10V, -VDS= 10V,

= 100W

500

See Note 1

100

-V = 0.1V

DS

T = 25 C

A

400

ANCE (W)

N (mW)

300

N-RESIST

10

200

URCE

WER DISSIPATI

d

100

P,P

DS(0N)

0

0 100 200

T , SUBSTRATE TEMPERATURE ( C)

SB

Fig. 1, Power Derating Curve

1

-V , DRAIN-S
01020

-V , GATE-SOURCE VOLTAGE (VOLTS)

GS

Fig. 2, Drain-Source Resistance vs Gate-Source Voltag

DS11401 Rev. D-3 2 of 2 BS817