DIODS BS250 Datasheet

P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

Features

High Input Impedance

·

Fast Switching Speed

·

CMOS Logic Compatible Input

·

No Thermal Runaway or Secondary Breakdown

·

Mechanical Data

Case: TO-92, Plastic

·

Leads: Solderable per MIL-STD-202,

·

Method 208
Pin Connection: See Diagram

·

Approx Weight: 0.18 grams

·

E

BOTTOM

VIEW

A

SGD

G

BS250

B

Dim Min Max

C

D

All Dimensions in mm

HH

TO-92

A

B

C

D

E

G

H

4.45 4.70

4.46 4.70

12.7 —

0.41 0.63

3.43 3.68

2.42 2.67

1.14 1.40

Maximum Ratings

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source-Voltage (pulsed)

Drain Current (continuous)

Power Dissipation @TC= 25°C (Note 1)

Operating and Storage Temperature Range

Inverse Diode

Maximum Forward Current (continuous)

Forward Voltage Drop (Typ.) @ VGS= 0, IF= 0.15A, Tj= 25°C

Electrical Characteristics

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage Current

Drain-Source Cutoff Current

Drain-Source ON Resistance

Thermal Resistance, Junction to Ambient Air

Forward Transconductance

Input Capacitance

Switching Times
Turn On Time
Turn Off Time

@ TA= 25°C unless otherwise specified

Characteristic Symbol Value Unit

@ TA= 25°C unless otherwise specified

Characteristic Symbol Value Unit

@ TA= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

-V

(BR)DSS

-V

-I

-I

r

DS (ON)

R

GS(th)

GSS

DSS

qJA

g

FS

C

iss

t

on

t

off

–V

DSS

–V

DGS

V

GS

–I

D

P

d

T

j,TSTG

I

F

V

F

60 70 — V

— 1.0 3.0 V

— — 20 nA

— — 0.5 µA

— 3.5 5.0 W

— — 150 K/W

— 150 — mS

—60—pF

—
—

25

5

—
—

60 V

60 V

±20 V

250 mA

830 mW

-55 +150 °C

0.15 A

0.85 V

ns

= 100µA, VGS= 0

I

D

V

GS=VDS

-V

-V

-V

Note 1

-V
f = 1.0MHz

-V
f = 1.0MHz

-V

R

D

, –ID= 1.0mA

= 15V, VDS= 0

GS

= 25V, VGS= 0

DS

= 10V, –ID= 0.2A

GS

= 10V, –ID= 0.2A,

DS

= 10V, VGS= 0,

DS

= 10V, –VDS= 10V,

GS

= 100W

Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.

DS21902 Rev. D-3 1 of 2 BS250

g

00

g

0.8

g

00

g

00

g

g

0.6

1

(See Note 1)

5

400

300

7V

Pulse test width 80µs;
pulse duty factor 1%

-V = 5.5V

GS

5.0V

6V

T = 25°C

A

d

P , POWER DISSIPATION (W)

D,

-I (ON) DRAIN SOURCE ON-CURRENT (mA)

0.4

0.2

0

0 100 200

T , AMBIENT TEMPERATURE (ºC)

A

Fi

. 1, Power DeratingCurve

500

400

Pulse test width 80µs;
pulse duty factor 1%

300

-V = 5V

GS

200

100

0

0

2

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fi

4

6

. 3, Saturation Characteristics

4.5V

4.0V

3.5V

3.0V

8

T = 25°C

A

10

-I (ON) DRAIN SOURCE ON CURRENT (A)

-I DRAIN CURRENT (A)

200

4.5V

4.0V

100

D,

3.0V

0

80

-V = 10V

DS

T = 25°C

A

100

1.0

0.8

0

20

-V , DRAIN-SOURCE VOLTAGE (V)

Pulse test width 80µs;
pulse duty factor 1%

40

DS

Fi

. 2, Output Characteristics

60

0.6

0.4

D,

0.2

0

0

2

-V , DRAIN-SOURCE VOLTAGE (V)

GS

. 4, Drain Current vs Gate-Source Voltage

Fi

4

6

8

10

fs

g , FORWARD TRANSCONDUCTANCE (mm)

5

400

Pulse test width 80µs;
pulse duty factor 1%

-V = 10V

DS

300

200

100

0

010

2

V , GATE-SOURCE VOLTAGE (V)

Fi

GS

. 5, Transconductance vs Gate-Source Voltage

4

6

8

fs

g , FORWARD TRANSCONDUCTANCE (mm)

5

400

300

200

100

0

0

-V = 10V

DS

Pulse test width 80µs;
pulse duty factor 1%

100

. 6, Transconductance vs. Drain Current

Fi

200

I , DRAIN CURRENT, (mA)

D

300

400

DS21902 Rev. D-3 2 of 2 BS250

500