DIODS BS208 Datasheet

Features

High Breakdown Voltage

·

High Input Impedance

·

Fast Switching Speed

·

Low Drain-Source On-Resistance

·

Specially Suited for Telephone Subsets

·

Mechanical Data

Case: TO-92, Plastic

·

Leads: Solderable per MIL-STD-202,

·

Method 208
Pin Connections: See Diagram

·

Weight: 0.18 grams (approx.)

·

BS208

P–CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

E

BOTTOM

VIEW

A

SGD

G

TO-92

B

C

D

HH

Dim Min Max

A

4.45 4.70

B

4.46 4.70

C

12.7 —

D

0.41 0.63

E

3.43 3.68

G

2.42 2.67

H

1.14 1.40

All Dimensions in mm

Maximum Ratings

Drain-Source-Voltage

Drain-Gate-Voltage

Gate-Source-Voltage (pulsed) (Note 2)

Drain-Current (continuous)

Power Dissipation @TC= 25°C (Note 1)

Operating and Storage Temperature Range

Inverse Diode

Maximum Forward Current (continuous)

Forward Voltage Drop (Typical)
@V

= 0, IF= 0.75A, Tj= 25°C

GS

@ TA= 25°C unless otherwise specified

Characteristic Symbol Value Unit

@ TA= 25°C unless otherwise specified

Characteristic

Electrical Characteristics

Characteristic Symbol Min Typ Max Unit Test Condition

Drain-Source Breakdown Voltage

Gate-Body Leakage Current

Drain-Source Cutoff Current

Gate-Source Threshold Voltage

Drain-Source ON Resistance

Thermal Resistance Junction to Ambient

Input Capacitance
Output Capacitance
Feedback Capacitance

-V

DSS

-V

DGS

V

GS

-I

D

P

d

T

j,TSTG

Symbol Value Unit

I

F

V

F

@ TA= 25°C unless otherwise specified

-V

(BR)DSS

-I

-I

-I

-V

r

DS(ON)

R

GSS

DSS
DSX

GS(th)

qJA

C

iss

C

oss

C

rss

200 230 — V

— — 10 nA

——

— 2.8 4.0 V

— 7.0 14 W

— — 150 K/W

—

270

35

6.0

240 V

200 V

±20 V

200 mA

830 mW

–55 to +150 °C

0.22 A

0.85 V

= 100µA, VGS= 0

-I

D

= 15V, VDS= 0

-V

GS

=130V, VGS= 0

1.0
25

—pF

µA

-V

DS

-V

= 10V, -VGS= 0.2V

DS

V

GS=VDS

-V

Note 1

-V

, -ID= 1.0mA

= 10V, -ID= 100 mA

GS

= 20V, VGS= 0, f =1.0MHz

DS

Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case.

2. Pulse Test: Pulse width = 80µs, duty factor = 1%.

DS21901 Rev. E-3 1 of 2 BS208

g

00

g

g

00

g

1000

g

1

g

2.0

See Note 2

T = 25°C

A

-V = 9V

GS

d

P , POWER DISSIPATION (W)

0.8

(See Note 1)

0.6

0.4

0.2

0

0 100 200

T , AMBIENT TEMPERATURE (ºC)

A

Fi

. 1. Power DeratingCurve

5

See Note 2

5.0

400

300

-V = 4.5V

T = 25°C

A

GS

1.6

1.2

0.8

D

0.4

-I (ON), DRAIN ON-CURRENT (A)

0

020

1.0

0.8

0.6

8

7

6

3.5
3

40

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fi

. 2, Output Characteristics

(See Note 2)

60

5

4

80

T = 25°C

A

-V = 25V

DS

100

D

-I , DRAIN ON-CURRENT (mA)

5

400

300

200

100

200

100

0.4

4.0

0

0

2

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fi

46

. 3. Saturation Characteristics

3.5

8

-V = 25V

DS

See Note 2

10

-I DRAIN-SOURCE CURRENT (A)

DS,

0.2

0

0

Fi

24

-V , GATE-SOURCE VOLTAGE (V)

GS

6810

. 4. Drain-Source Current vs Gate-Source Voltage

-V = 25V

DS

See Note 2

800

600

400

200

fs

g , FORWARD TRANSCONDUCTANCE (mm)

0

02 4

-V , GATE-SOURCE VOLTAGE (V)

Fi

GS

. 5. Transconductance vs Gate-Source Voltage

6810

fs

g , FORWARD TRANSCONDUCTANCE (mm)

0

0

-I , DRAIN CURRENT (mA)

D

. 6. Transconductance vs. Drain Current

Fi

500

1000

DS21901 Rev. E-3 2 of 2 BS208