DIODS BS170 Datasheet
Features
High Input Impedance
·
Fast Switching Speed
·
CMOS Logic Compatible Input
·
No Thermal Runaway or Secondary
·
Breakdown
Mechanical Data
Case: TO-92, Plastic
·
Leads: Solderable per MIL-STD-202,
·
Method 208
Pin Connection: See Diagram
·
Weight: 0.18 grams (approx.)
·
BS170
N-CHANNEL ENHANCEMENT MODE TRANSISTOR
E
BOTTOM
VIEW
A
SGD
G
B
C
D
All Dimensions in mm
TO-92
Dim Min Max
A
4.45 4.70
B
4.46 4.70
C
12.7 —
D
0.41 0.63
E
3.43 3.68
G
2.42 2.67
H
1.14 1.40
HH
Maximum Ratings
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source-Voltage (pulsed)
Drain Current (continuous)
Power Dissipation @TC= 25°C (Note 1)
Junction Temperature
Operating and Storage Temperature Range
Inverse Diode
Maximum Forward Current (continuous)
Forward Voltage Drop (typ.) @ VGS= 0, IF= 0.5A, Tj= 25°C
Electrical Characteristics
Characteristic Symbol Min Typ Max Unit Test Condition
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage Current
Drain-Cutoff Current
Drain-Source ON Resistance
Thermal Resistance, Junction to Ambient Air
Forward Transconductance
Input Capacitance
Turn On Time
Turn Off Time
@ TA= 25°C unless otherwise specified
Characteristic Symbol Value Unit
@ TA= 25°C unless otherwise specified
Characteristic Symbol Value Unit
@ TA= 25°C unless otherwise specified
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
r
DS (ON)
R
g
C
t
t
qJA
FS
iss
on
off
V
DSS
V
DGS
V
GS
I
D
P
d
T
j
T
j,TSTG
I
F
V
F
60 90 — V
0.8 1.0 3.0 V
— — 10 nA
— — 0.5 µA
— 3.5 5.0 W
— — 150 K/W
— 200 —
—60—pF
—
5.0
15
—ns
60 V
60 V
±20 V
300 mA
830 mW
150 °C
-55 to +150 °C
0.50 A
0.85 V
mm
= 100µA, VGS= 0
I
D
V
GS=VDS
V
GS
V
DS
V
GS
Note 1
V
DS
V
DS
V
GS
R
D
, ID= 1.0mA
= 15V, VDS= 0
= 25V, VGS= 0
= 10V, ID= 0.2mA
= 10V, ID= 0.2A, f = 1MHz
= 10V, VGS= 0, f =1.0MHz
= 10V, VDS= 10V,
= 100W
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case.
DS21802 Rev. D-3 1 of 2 BS170
g
00
g
1
g
00
g
g
g
1
7V
T = 25°C
A
d
P , POWER DISSIPATION (W)
0.8
(See Note 1)
0.6
0.4
0.2
0
0 100 200
T , AMBIENT TEMPERATURE (ºC)
A
Fi
. 1. Power DeratingCurve
500
V=5V
GS
400
Pulse test width 80µs;
pulse duty factor 1%
300
4.5V
T = 25°C
A
I (ON), DRAIN SOURCE ON CURRENT (A)
0.8
0.6
Pulse test width 80µs;
pulse duty factor 1%
V=6V
GS
5V
0.4
0.2
D
4V
3V
0.1
100
DS
A
1.0
0.8
0
20 80
V , DRAIN-SOURCE VOLTAGE (V)
DS
Pulse test width 80µs;
pulse duty factor 1%
40
Fi
. 2. Output Characteristics
60
V = 10V
T = 25°C
0.6
D
I (ON), DRAIN SOURCE ON-CURRENT (mA)
fs
g , FORWARD TRANSCONDUCTANCE (mm)
200
100
4.0V
3.5V
3.0V
0
0
2
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fi
4
6
8
. 3. Saturation Characteristics
10
5
V = 10V
DS
400
Pulse test width 80µs;
pulse duty factor 1%
300
200
100
0
010
2
V , GATE-SOURCE VOLTAGE (V)
GS
Fi
. 5. Transconductance vs Gate-Source Voltage
4
6
8
m
g , FORWARD TRANSCONDUCTANCE (m )
fs
I DRAIN CURRENT (A)
0.4
D,
0.2
0
0
2
V , GATE-SOURCE VOLTAGE (V)
Fi
. 4. Drain Current vs Gate-Source Voltage
5
400
Pulse test width 80µs;
pulse duty factor 1%
300
200
100
0
0
100
. 6 Transconductance vs. Drain Current
Fi
4
GS
200
I , DRAIN CURRENT (mA)
D
6
300
8
V = 10V
DS
400
10
500
DS21802 Rev. D-3 2 of 2 BS170
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