DIODS BS107 Datasheet
Features
High Breakdown Voltage
·
High Input Impedance
·
Fast Switching Speed
·
Specially Suited for Telephone Subsets
·
Mechanical Data
Case: TO-92 Plastic
·
Leads: Solderable per
·
MIL-STD-202, Method 208
Pin Connections: See Diagram
·
Weight: 0.18 grams (approx.)
·
BS107
N–CHANNEL ENHANCEMENT MODE TRANSISTOR
E
BOTTOM
VIEW
A
SGD
G
B
C
D
HH
All Dimensions in mm
TO-92
Dim Min Max
A
4.45 4.70
B
4.46 4.70
C
12.7 —
D
0.41 0.63
E
3.43 3.68
G
2.42 2.67
H
1.14 1.40
Maximum Ratings
Drain-Source-Voltage
Drain-Gate-Voltage
Gate-Source-Voltage (pulsed) (Note 2)
Drain-Current (continuous)
Power Dissipation @TC= 25°C (Note 1)
Operating and Storage Temperature Range
Inverse Diode
Maximum Forward Current (continuous)
Forward Voltage Drop (typical)
@V
= 0, IF= 0.5A, Tj= 25°C
GS
@ TA= 25°C unless otherwise specified
Characteristic Symbol Value Unit
@ TA= 25°C unless otherwise specified
Characteristic
Electrical Characteristics
Characteristic Symbol Min Typ Max Unit Test Condition
Drain-Source Breakdown Voltage
Gate-Body Leakage Current
Drain-Cutoff Current
Gate-Source Threshold Voltage
Drain-Source ON Resistance
Thermal Resistance, Junction to Ambient Air
Input Capacitance
Output Capacitance
Feedback Capacitance
Turn On Time
Turn Off Time
V
DSS
V
DGS
V
GS
I
D
P
d
T
j,TSTG
Symbol Value Unit
I
F
V
F
@ TA= 25°C unless otherwise specified
V
(BR)DSS
I
GSS
I
DSS
I
DSX
V
GS(th)
r
DS(ON)
R
C
C
C
t
t
qJA
oss
on
off
200 230 — V
— — 10 nA
——
— 1.8 3 V
—1828W
— — 150 K/W
iss
rss
—
—
58
8.0
1.5
5.0
15
200 V
200 V
±20 V
120 mA
830 mW
-55 to +150 °C
0.5 A
0.85 V
= 100µA, VGS= 0
I
D
= 15V, VDS= 0
V
GS
=130V, VGS= 0
30
1.0
—pF
—ns
nA
µA
V
DS
V
= 70V, VGS= 0.2V
DS
V
GS=VDS
V
GS
(Note 1)
V
DS
V
GS
R
D
, ID= 1.0mA
= 2.8V, ID= 20 mA
= 20V, VGS= 0,f =1.0MHz
= 10V, VDS= 10V,
= 100W
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case.
2. Pulse Test: Pulse width = 80µs, duty factor = 1%.
DA21804 Rev. C-3 1 of 2 BS107
g
00
g
00
g
g
00
g
g
1
500
See Note 2
T = 25°C
A
d
P , POWER DISSIPATION (W)
0.8
(See Note 1)
0.6
0.4
0.2
0
0 100 200
T , AMBIENT TEMPERATURE (ºC)
A
. 1. Power DeratingCurve
Fi
5
(See Note 2)
400
300
T = 25°C
A
V=4V
GS
400
300
200
D
100
I (ON), DRAIN ON-CURRENT (mA)
0
020
1.0
0.8
0.6
V = 4.0V
3.5
3.0
2.5
2.0
40
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fi
. 2. Output Characteristics
(See Note 2)
60
GS
80
V = 25V
DS
T = 25°C
A
100
D(ON)
I , DRAIN ON-CURRENT (mA)
200
100
5
400
300
200
3.5V
0.4
3V
2.5V
0
0
2
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fi
46
. 3. Saturation Characteristics
2V
8
V = 25V
DS
See Note 2
10
D,
I DRAIN CURRENT (A)
0.2
0
0
V , GATE-SOURCE VOLTAGE (V)
GS
Fi
. 4. Drain Current vs Gate-Source Voltage
5
(See Note 2)
2
31
4
V = 25V
DS
5
400
300
200
fs
g , FORWARD TRANSCONDUCTANCE (mm)
100
0
01234 5
V , GATE-SOURCE VOLTAGE (VOLTS)
GS
Fi
. 5. Transconductance vs Gate-Source Voltage
fs
g , FORWARD TRANSCONDUCTANCE (mm)
100
0
0
I , DRAIN CURRENT (mA)
D
. 6. Transconductance vs. Drain Current
Fi
100
200
DA21804 Rev. C-3 2 of 2 BS107
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