DIODS BC857C, BC858A, BC858B, BC858C, BC857B Datasheet
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Features
BC856A - BC858C
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
· Ideally Suited for Automatic Insertion
· Complementary NPN Types Available
(BC846-BC848)
· For Switching and AF Amplifier Applications
Mechanical Data
· Case: SOT-23, Molded Plastic
· Case material - UL Flammability Rating
Classification 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Pin Connections: See Diagram
· Marking Codes (See Table Below & Diagram
on Page 3)
· Ordering & Date Code Information: See Page 3
· Approx. Weight: 0.008 grams
Marking Code (Note 2)
Type Marking Type Marking
BC856A 3A, K3A BC857C 3G, K3G
BC856B 3B, K3B BC858A 3J, K3J, K3A, K3V
BC857A 3E, K3V, K3A BC858B 3K, K3K, K3B, K3W
BC857B 3F, K3W, K3B BC858C 3L, K3L, K3G
A
C
B
C
TOP VIEW
BE
E
D
G
H
K
J
L
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
M
H
2.80 3.00
J
0.013 0.10
K
0.903 1.10
L
0.45 0.61
M
0.85 0.80
a
All Dimensions in mm
0° 8°
Maximum Ratings
Collector-Base Voltage BC856
Collector-Emitter Voltage BC856
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Current gain subgroup “C” is not available for BC856.
@ TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
BC857
BC858
BC857
BC858
V
V
V
I
I
R
Tj,T
CBO
CEO
EBO
I
C
CM
EM
P
d
qJA
STG
-80
-50
-30
-65
-45
-30
-5.0 V
-100 mA
-200 mA
-200 mA
300 mW
417
-65 to +150 °C
°C/W
V
V
DS11207 Rev. 12 - 2 1 of 3 BC856A-BC858C
=25°C unless otherwise specified
Electrical Characteristics
@ T
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 3) BC856
BC857
BC858
Collector-Emitter Breakdown Voltage (Note 3) BC856
BC857
BC858
Emitter-Base Breakdown Voltage (Note 3)
H-Parameters
Small Signal Current Gain Current Gain Group A
Input Impedance Current Gain Group A
Output Admittance Current Gain Group A
Reverse Voltage Transfer Ratio Current Gain Group A
DC Current Gain (Note 3) Current Gain Group A
C
Collector-Emitter Saturation Voltage (Note 3)
Base-Emitter Saturation Voltage (Note 3)
Base-Emitter Voltage (Note 3)
Collector-Cutoff Current (Note 3) BC856
BC857
BC858
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
h
B
h
C
B
C
h
h
B
h
C
h
h
B
h
C
h
B
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
I
CES
I
CES
I
CES
I
CBO
I
CBO
C
-80
-50
-30
-65
-45
-30
fe
fe
fe
h
ie
h
ie
h
ie
oe
oe
oe
re
re
re
125
220
FE
420
-600—-650—-750
f
100 200 — MHz
T
CBO
—
—
—
—
—
—
-5 — — V
200
—
330
—
600
—
2.7
—
4.5
—
8.7
—
18
—
30
—
60
—
1.5x10
—
—
—
—
——-700
—
—
—
—
—
2x10
3x10
180
290
520
-75
-250
-850
—
—
—
—
—
-4
-4
—3 —pF
NF — 2 10 dB
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-4
—
—
—
250
475
800
-300
-650
—mV
-820
-15
-15
-15
-15
-4.0
I
= 10mA, IB = 0
V
C
= 10mA, IB = 0
I
V
C
IE = 1mA, IC = 0
—
—
—
kW
V
kW
kW
µS
µS
µS
—
—
—
—
mV
mV
nA
nA
nA
nA
µA
= -5.0V, IC = -2.0mA,
CE
f = 1.0kHz
= -5.0V, IC = -2.0mA
V
CE
I
= -10mA, IB = -0.5mA
C
IC = -100mA, IB = -5.0mA
I
= -10mA, IB = -0.5mA
C
IC = -100mA, IB = -5.0mA
V
= -5.0V, IC = -2.0mA
CE
VCE = -5.0V, IC = -10mA
= -80V
V
CE
VCE = -50V
VCE = -30V
VCB = -30V
VCB = -30V, TA = 150°C
VCE = -5.0V, IC = -10mA,
f = 100MHz
VCB = -10V, f = 1.0MHz
= -5.0V, IC = 200µA,
V
CE
R
= 2kW, f = 1kHz,
S
Df = 200Hz
Notes: 3. Short duration pulse test used to minimize self-heating effect.
DS11207 Rev. 12 - 2 2 of 3 BC856A-BC858C
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