DIODS BC857BS Datasheet

DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features

TCUDORPWEN

· Ideally Suited for Automatic Insertion

· For Switching and AF Amplifier Applications

· Ultra-Small Surface Mount Package

Mechanical Data

· Case: SOT-363, Molded Plastic

· Case Material - UL Flammability Rating

Classification 94V-0

· Moisture sensitivity: Level 1 per J-STD-020A

· Terminals: Solderable per MIL-STD-202,

Method 208

· Terminal Connections: See Diagram

· Marking: K3W (See Page 3)

· Weight: 0.006 grams

BC857BS

A

C

B

H

K

J

C

B

2

B

E

2

TOP VIEW

D

1

2

L

F

E

1

C

1

M

SOT-363

Dim Min Max

A

0.10 0.30

B

1.15 1.35

C

2.00 2.20

D

0.65 Nominal

F

0.30 0.40

H

1.80 2.20

J

K

L

M

a

¾ 0.10

0.90 1.00

0.25 0.40

0.10 0.25

0° 8°

All Dimensions in mm

Maximum Ratings

@ TA= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (Note 1)

Peak Collector Current (Note 1)

Peak Base Current (Note 1)

Power Dissipation at TSB = 50°C (Note 1)

Operating and Storage Temperature Range

V

V

V

I

I

Tj,T

CBO

CEO

EBO

I

C

CM

BM

P

d

STG

-50

-45

-5.0 V

-100 mA

-200 mA

-200 mA

200 mW

-55 to +125 °C

V

V

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

DS30373 Rev. 1 - 2 1 of 3 BC857BS

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Electrical Characteristics

250

1000

0

1000

@ TA= 25°C unless otherwise specified

TCUDORPWEN

Characteristic Symbol Min Typ Max Unit Test Condition

DC Current Gain (Note 2)

Thermal Resistance, Junction to Ambient Air (Note 1)

Collector-Emitter Saturation Voltage (Note 2)

Base-Emitter Saturation Voltage (Note 2)

Base-Emitter Voltage (Note 2)

Collector Cutoff Current

Emitter Cutoff Current

Gain Bandwidth Product

Collector-Base Capacitance

Emitter-Base Capacitance

h

R

V

CE(SAT)

V

BE(SAT)

V

I

CBO

I

CBO

I

EBO

C

C

FE

qJA

BE

f

T

CBO

EBO

220 — 475 —

— — 625 °C/W

—

—
—

-100

-400

mV

— -700 — mV

-580 -665 -750 mV

—

—
—

-15

-4.0

— — -100 nA

100 — — MHz

—— 3 pF

—11 — pF

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

VCE = -5.0V, IC = -2.0mA

Note 1

I

= -10mA, IB = -0.5mA

C

IC = -100mA, IB = -5.0mA

IC = -10mA, IB = -0.5mA

VCE = -5.0V, IC = -2.0mA

V

nA
µA

= -30V, IE= 0

CB

= -30V, Tj = 150°C

V

CB

VEB = -5.0V, IC = 0

= -5.0V, IC = -10mA,

V

CE

f = 100MHz

VCB = -10V, f = 1.0MHz

V

= -0.5V, f = 1.0MHz

EB

200

150

100

50

d

P , POWER DISSIPATION (mW)

0

0 100 200

T , AMBIENT TEMPERATURE (°C)

A

Fig.1,PowerDerating Curve

.5

I / I = 20

CB

0.4

0.3

(see Note 1)

100

10

FE,

h DC CURRENT GAIN

100

T = 150°C

A

T = 25°C

A

T = -50°C

A

1

1

I , COLLECTOR CURRENT (mA)

C

10

Fig. 2, DC Current Gain vs Collector Current

T = 25°C

A

V = -5V

CE

V = -5V

CE

100

0.2

T = 25°C

A

T = -50°C

A

110

I , COLLECTOR CURRENT (mA)

C

CE

V , COLLECTOR SATURATION VOLTAGE (V)

0.1

0

0.1

Fig. 3, Collector Saturation Voltage vs Collector Current

T = 150°C

A

100

1000

T

f , GAIN BANDWIDTH PRODUCT (MHz)

10

110100

I , COLLECTOR CURRENT (mA)

C

Fig. 4, Gain Bandwidth Product vs Collector Current

DS30373 Rev. 1 - 2 2 of 3 BC857BS

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