DIODS BC848C, BC847C, BC847B, BC848A, BC846B Datasheet
...
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
Ideally Suited for Automatic Insertion
·
Complementary PNP Types Available
·
(BC856-BC858)
For Switching and AF Amplifier Applications
·
Mechanical Data
Case: SOT-23, Molded Plastic
·
Case material - UL Flammability Rating
·
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
·
Terminals: Solderable per MIL-STD-202,
·
Method 208
Pin Connections: See Diagram
·
· Marking Codes (See Table Below & Diagram
on Page 3)
· Ordering & Date Code Information: See Page 3
· Approx. Weight: 0.008 grams
BC846A - BC848C
SOT-23
A
C
B
C
TOP VIEW
B
E
E
D
G
H
K
J
L
M
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J
0.013 0.10
K
0.903 1.10
L
0.45 0.61
M
0.85 0.80
a
All Dimensions in mm
0° 8°
Marking Code (Note 2)
Type Marking Type Marking
BC846A 1A, K1Q BC847C 1G, K1M
BC846B 1B, K1R BC848A 1J, K1J, K1E, K1Q
BC847A 1E, K1E, K1Q BC848B 1K, K1K, K1F, K1R
BC847B 1F, K1F, K1R BC848C 1L, K1L, K1M
Maximum Ratings
Collector-Base Voltage BC846
Collector-Emitter Voltage BC846
Emitter-Base Voltage BC846, BC847
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ TA= 25°C unless otherwise specified
Characteristic Symbol Value Unit
BC847
BC848
BC847
BC848
BC848
V
V
V
I
I
R
T
j,TSTG
CBO
CEO
EBO
I
C
CM
EM
P
d
qJA
80
50
30
65
45
30
6.0
5.0
100 mA
200 mA
200 mA
300 mW
417
-65 to +150 °C
°C/W
V
V
V
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf
2. Current gain subgroup “C” is not available for BC846.
DS11108 Rev. 14 - 2 1 of 3 BC846A-BC848C
Electrical Characteristics
@ TA= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 3) BC846
Collector-Emitter Breakdown Voltage (Note 3) BC846
Emitter-Base Breakdown Voltage BC846, BC847
(Note 3) BC848
H-Parameters
Small Signal Current Gain Current Gain Group A
BC847
BC848
BC847
BC848
Input Impedance Current Gain Group A
Output Admittance Current Gain Group A
Reverse Voltage Transfer Ratio A
Current Gain Group B
DC Current Gain Current Gain Group A
(Note 3) C
Collector-Emitter Saturation Voltage (Note 3)
Base-Emitter Saturation Voltage (Note 3)
Base-Emitter Voltage (Note 3)
Collector-Cutoff Current (Note 3) BC846
BC847
BC848
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
fe
h
B
C
B
C
B
C
C
B
h
h
h
h
h
h
h
h
h
h
h
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
I
CES
I
CES
I
CES
I
CBO
I
CBO
C
fe
fe
ie
ie
ie
oe
oe
oe
re
re
re
FE
f
T
CBO
80
50
30
65
45
30
6
5
—
—
—
—
—
—
—
—
—
—
—
—
110
200
420
—
—
580
—
—
—
—
—
—
100 300 — MHz
—3.0 — pF
—
—
—
—
—
—
—— V
220
330
600
2.7
4.5
8.7
18
30
60
-4
1.5x10
-4
2x10
-4
3x10
180
290
520
90
200
700
900
660
—
—
—
—
—
—
NF — 2 10 dB
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
220
450
800
250
600
V
V
—
—
—
kW
kW
kW
µS
µS
µS
—
—
—
—
mV
—mV
700
770
15
15
15
15
5.0
mV
nA
nA
nA
nA
µA
= 10mA, IB= 0
I
C
= 10mA, IB= 0
I
C
= 1mA, IC= 0
I
E
= 5.0V, IC= 2.0mA,
V
CE
f = 1.0kHz
= 5.0V, IC= 2.0mA
V
CE
= 10mA, IB= 0.5mA
I
C
I
= 100mA, IB= 5.0mA
C
= 10mA, IB= 0.5mA
I
C
I
= 100mA, IB= 5.0mA
C
= 5.0V, IC= 2.0mA
V
CE
V
= 5.0V, IC= 10mA
CE
= 80V
V
CE
V
= 50V
CE
VCE= 30V
V
= 40V
CB
V
= 30V, TA= 150°C
CB
= 5.0V, IC= 10mA,
V
CE
f = 100MHz
= 10V, f = 1.0MHz
V
CB
V
= 5V, IC= 200µA,
CE
= 2.0kW,
R
S
f = 1.0kHz, Df = 200Hz
Notes: 3. Short duration pulse test used to minimize self-heating effect.
DS11108 Rev. 14 - 2 2 of 3 BC846A-BC848C
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