DIODS BC847PN Datasheet
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE
Features
· Epitaxial Die Construction
· Two internal isolated NPN/PNP Transistors in
one package
· Ultra-Small Surface Mount Package
Mechanical Data
· Case: SOT-363, Molded Plastic
· Case material - UL Flammability Rating
Classification 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking (See Page 3): K7P
· Ordering & Date Code Information: See Page 3
· Weight: 0.006 grams (approx.)
K
J
A
C1B2E
E1B1C
G
H
D
BC847PN
MOUNT TRANSISTOR
SOT-363
2
C
B
2
M
L
F
Dim Min Max
A
0.10 0.30
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
F
0.30 0.40
H
1.80 2.20
J
K
L
M
a
All Dimensions in mm
¾ 0.10
0.90 1.00
0.25 0.40
0.10 0.25
°8
Maximum Ratings Total Device
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Maximum Ratings NPN BC847B Section
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Maximum Ratings PNP BC857B Section
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
@ TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
P
d
R
qJA
Tj,T
STG
@ TA= 25°C unless otherwise specified
Characteristic Symbol Value Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
EM
@ TA= 25°C unless otherwise specified
Characteristic Symbol Value Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
EM
200 mW
625 °C/W
-65 to +150 °C
50 V
45
6.0
100 mA
200 mA
200 mA
-50
-45
-5.0 V
-100 mA
-200 mA
-200 mA
V
V
V
V
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30278 Rev. 2 - 2 1 of 3 BC847PN
Electrical Characteristics NPN BC847B Section
@ TA= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 2)
Collector-Emitter Breakdown Voltage (Note 2)
Emitter-Base Breakdown Voltage (Note 2)
DC Current Gain (Note 2)
Collector-Emitter Saturation Voltage (Note 2)
Base-Emitter Saturation Voltage (Note 2)
Base-Emitter Voltage (Note 2)
Collector-Cutoff Current (Note 2)
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
V(
BR)CBO
V(
BR)CEO
V(
BR)EBO
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
I
I
C
h
CBO
CBO
f
CBO
FE
T
50 — — V
45 — — V
6— — V
200 290 450 —
—
—
580
—
—
—
90
200
700
900
660
—
—
—
250
600
—mV
700
720
15
5.0
100 300 — MHz
— 3.5 6.0 pF
NF — 2.0 10 dB
mV
mV
nA
µA
= 10mA, IB= 0
I
C
I
= 10mA, IB= 0
C
= 1mA, IC= 0
I
E
VCE = 5.0V, IC = 2.0mA
I
= 10mA, IB = 0.5mA
C
= 100mA, IB = 5.0mA
I
C
I
= 10mA, IB = 0.5mA
C
IC = 100mA, IB = 5.0mA
= 5.0V, IC = 2.0mA
V
CE
V
=5.0V, IC = 10mA
CE
V
= 30V
CB
= 30V, TA = 150°C
V
CB
V
= 5.0V, IC = 10mA,
CE
f = 100MHz
VCB = 10V, f = 1.0MHz
= 5V, IC = 200µA,
V
CE
R
= 2.0kW,
G
f = 1.0kHz, Df = 200Hz
Electrical Characteristics PNP BC857B Section
@ TA= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 2)
Collector-Emitter Breakdown Voltage (Note 2)
Emitter-Base Breakdown Voltage (Note 2)
DC Current Gain (Note 2)
Collector-Emitter Saturation Voltage (Note 2)
Base-Emitter Saturation Voltage (Note 2)
Base-Emitter Voltage (Note 2)
Collector-Cutoff Current (Note 2)
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
V(
BR)CBO
V(
BR)CEO
V(
BR)EBO
h
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
I
I
C
FE
CBO
CBO
f
T
CBO
-50 — — V
-45 — — V
-5 — — V
220 290 475 —
—
—
-600—-650
—
—
-75
-250
-700
-850
—
—
—
-300
-650
—
-950
-750
-820
-15
-4.0
100 200 — MHz
— 3 4.5 pF
NF — — 10 dB
mV
mV
mV
nA
µA
= 10mA, IB= 0
I
C
IC = 10mA, IB= 0
IE = 1mA, IC= 0
VCE = 5.0V, IC = 2.0mA
I
= 10mA, IB = 0.5mA
C
IC = 100mA, IB = 5.0mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
V
= 5.0V, IC = 2.0mA
CE
VCE =5.0V, IC = 10mA
V
= 30V
CB
= 30V, TA = 150°C
V
CB
VCE = 5.0V, IC = 10mA,
f = 100MHz
VCB = 10V, f = 1.0MHz
= 5V, IC = 200µA,
V
CE
R
= 2.0kW,
G
f = 1.0kHz, Df = 200Hz
Notes: 2. Short duration pulse test used to minimize self-heating effect.
DS30278 Rev. 2 - 2 2 of 3 BC847PN
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