DIODS BC817-25, BC817-40, BC817-16 Datasheet
Features
BC817-16 / -25 / -40
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
· Ideally Suited for Automatic Insertion
· Epitaxial Planar Die Construction
· For Switching, AF Driver and Amplifier
Applications
· Complementary PNP Types Available (BC807)
Mechanical Data
· Case: SOT-23, Molded Plastic
· Case material - UL Flammability Rating
Classification 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202, Method
208
· Pin Connections: See Diagram
· Marking (See Page 3): BC817-16 6A, K6A
BC817-25 6B, K6B
BC817-40 6C, K6C
· Ordering & Date Code Information: See Page 3
· Approx. Weight: 0.008 grams
Maximum Ratings
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation at TSB = 50°C (Note 1)
Thermal Resistance, Junction to Substrate Backside (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
SOT-23
Dim Min Max
A
B
C
D
E
G
H
J
K
L
M
a
0.37 0.51
1.20 1.40
2.30 2.50
0.89 1.03
0.45 0.60
1.78 2.05
2.80 3.00
0.013 0.10
0.903 1.10
0.45 0.61
0.85 0.80
0° 8°
A
C
B
C
TOP VIEW
B
E
E
D
G
H
K
J
L
M
All Dimensions in mm
V
V
I
I
R
R
Tj,T
CEO
EBO
I
C
CM
EM
P
d
qSB
qJA
STG
45 V
5.0 V
800 mA
1000 mA
1000 mA
310 mW
320 °C/W
403 °C/W
-65 to +150 °C
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic (Note 2) Symbol Min Max Unit Test Condition
DC Current Gain Current Gain Group -16
-25
-40
Current Gain Group -16
-25
-40
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
h
V
CE(SAT)
V
I
CES
I
EBO
C
FE
BE
f
T
CBO
100
160
250
60
100
170
250
400
600
—
—
—
—
— 0.7 V
— 1.2 V
—
100
5.0
nA
µA
— 100 nA
100 — MHz
—12pF
= 1.0V, IC = 100mA
V
CE
= 1.0V, IC = 300mA
V
CE
IC = 500mA, IB = 50mA
VCE = 1.0V, IC = 300mA
VCE = 45V
VCE = 25V, Tj = 150°C
VEB = 4.0V
V
= 5.0V, IC = 10mA,
CE
f = 50MHz
= 10V, f = 1.0MHz
V
CB
Notes: 1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm2 area.
2. Short duration pulse test used to minimize self-heating effect.
DS11107 Rev. 9 - 2 1 of 3 BC817-16/-25/-40
1000
0
1000
00
100
00
d
P , POWER DISSIPATION (mW)
4
See Note 1
300
200
100
0
0100200
100
T
f , GAIN BANDWIDTH PRODUCT (MHz)
T = 25°C
A
f = 20MHz
V = 5V
1V
10
1 10 100 1000
CE
CE(SAT)
V , COLLECTOR SATURATION VOLTAGE (V)
C
I , COLLECTOR CURRENT (mA)
T , SUBSTRATE TEMPERATURE (°C)
SB
Fig. 1, Power Derating Curve
.5
typical
limits
at T = 25°C
A
0.4
I / I = 10
CB
0.3
0.2
0.1
25°C
150°C
-50°C
0
0.1
110
I , COLLECTOR CURRENT (mA)
C
100 1000
Fig. 3, Collector Sat. Voltage vs Collector Current
5
400
300
200
100
0
3.2
2.8
2.4
1.6
1.4
1.2
0.8
0.6
0.4
I = 0.2mA
B
2
1.8
012
FE
h , DC CURRENT GAIN
100
I , COLLECTOR CURRENT (mA)
C
Fig. 2, Gain-Bandwidth Product vs Collector Current
V = 1V
CE
150°C
T = 25°C
A
-50°C
10
110
I , COLLECTOR CURRENT (mA)
C
100
Fig. 4, DC Current Gain vs Collector Current
80
60
40
C
I , COLLECTOR CURRENT (mA)
20
0
01020
10000.1
0.35
0.3
0.25
0.2
0.15
0.1
I = 0.05mA
B
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig.5, Typical Emitter-Collector Characteristics
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig.6, Typical Emitter-Collector Characteristics
DS11107 Rev. 9 - 2 2 of 3 BC817-16/-25/-40
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