DIODS BC807 Datasheet
Features
High Breakdown Voltage
·
High Input Impedance
·
Fast Switching Speed
·
Specially Suited for Telephone Subsets
·
Ideal for Automated Surface Mount Assembly
·
Mechanical Data
Case: SOT-23, Plastic
·
Terminals: Solderable per
·
MIL-STD-202 Method 208
Pin Connection: See Diagram
·
Marking: S07
·
Weight: 0.008 grams (approx.)
·
BS807
N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
SOT-23
Dim Min Max
A
0.37 0.51
B
1.19 1.40
C
2.10 2.50
D
0.89 1.05
E
0.45 0.61
G
1.78 2.05
H
2.65 3.05
J
0.013 0.15
K
0.89 1.10
L
0.45 0.61
M
0.076 0.178
All Dimensions in mm
E
D
TOP VIEW
D
G
H
A
B
C
SG
K
J
L
M
Maximum Ratings
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed) (Note 2)
Drain Current (continuous)
Power Dissipation @ TC= 50°C (Note 1)
Operating and Storage Temperature Range
Inverse Diode
Max Forward Current (continuous)
Forward Voltage Drop (typ)
@V
= 0, IF= 0.3A, Tj= 25°C
GS
Notes: 1. Device mounted on ceramic substrate 0.7mm x 2.5cm2area.
2. Pulse test: Pulse width = 80µs, duty cycle = 1%.
@ TA= 25°C unless otherwise specified
Characteristic Symbol Value Unit
@ TA= 25°C unless otherwise specified
Characteristic Symbol Value Unit
V
V
V
T
j,TSTG
V
DSS
DGS
GS
I
D
P
I
F
F
200 V
200 V
±20 V
100 mA
d
310 mW
-55 to +150 °C
0.3 A
0.85 V
DS11301 Rev. D-3 1 of 3 BS807
@ T
= 25°C unless otherwise specified
Electrical Characteristics
A
Characteristic Symbol Min Typ Max Unit Test Condition
Drain-Source Breakdown Voltage
Gate-Body Leakage Current
Drain-Source Cutoff Current
Gate-Source Threshold Voltage
Drain-Source ON Resistance
Thermal Resistance, Junction to Substrate Backside
Thermal Resistance, Junction to Ambient Air
Input Capacitance
Output Capacitance
Feedback Capacitance
V
(BR)DSS
I
GSS
I
DSS
I
DSX
V
GS(th)
r
DS(ON)
R
qJSB
R
C
C
C
qJA
iss
oss
rss
Notes: 1. Device mounted on ceramic substrate 0.7mm x 2.5cm2area.
2. Pulse test: Pulse width = 80µs, duty cycle = 1%.
200 230 — V
— — 10 nA
——
30
1.0
— 1.8 3.0 V
—1828W
— — 320 K/W
— — 400 K/W
—
58
8.0
1.5
—pF
nA
µA
= 100µA, VGS= 0
I
D
= 15V, VDS= 0
V
GS
= 130V, VGS=0
V
DS
V
= 70V, VGS= 0.2V
DS
V
GS=VDS
V
GS
, ID= 1.0mA
= 2.8V, ID= 20 mA
Note 1
Note 1
= 20V,VGS= 0,f = 1.0 MHz
V
DS
DS11301 Rev. D-3 2 of 3 BS807
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