DIODS BAV70DW Datasheet
Features
· Fast Switching Speed
TCUDORPWEN
· Ultra-Small Surface Mount Package
· For General Purpose Switching Applications
· High Conductance
· Two “BAV70” Circuits In One Package
Mechanical Data
· Case: SOT-363, Molded Plastic
· Case Material - UL Flammability Rating
Classification 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Orientation: See Diagram
· Marking: KJA (see page 3)
· Weight: 0.006 grams (approx.)
BAV70DW
QUAD SURFACE MOUNT SWITCHING DIODE ARRAY
SOT-363
Dim Min Max
0.10 0.30
A
1.15 1.35
B
2.00 2.20
C
0.65 Nominal
D
0.30 0.40
E
1.80 2.20
G
1.80 2.20
H
J
K
L
M
a
¾ 0.10
0.90 1.00
0.25 0.40
0.10 0.25
0° 8°
All Dimensions in mm
K
J
A
G
H
D
A
C
2
1
A
A
1
1
TOP VIEW
C
B
M
L
F
A
2
C
2
Maximum Ratings
@ TA= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
@ TA= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 2)
Forward Voltage (Note 2)
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
V
(BR)R
V
F
I
R
C
T
t
rr
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
d
R
qJA
T
j,TSTG
-65 to +150 °C
75 ¾ V
0.715
¾
0.855
1.0
1.25
2.5
¾
50
30
25
¾ 2.0 pF
¾ 4.0 ns
100 V
75
V
53 V
300 mA
150
2.0
1.0
mA
A
200 mW
625 °C/W
= 2.5mA
I
F
= 1.0mA
I
F
IF = 10mA
V
IF = 50mA
IF = 150mA
V
mA
mA
mA
nA
= 75V
R
V
= 75V, Tj = 150°C
R
= 25V, Tj = 150°C
V
R
VR = 20V
= 0, f = 1.0MHz
V
R
IF = IR = 10mA,
= 0.1 x IR,RL = 100W
I
rr
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30132 Rev. 4 - 2 1 of 3 BAV70DW
www.diodes.com
TCUDORPWEN
O
1
300
2.0
10000
1000
T = 150ºC
A
T = 125ºC
A
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.001
0.1
T = 150ºC
A
T = 75ºC
A
0.01
0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
0.5
1.0
Fig. 1 Forward Characteristics
1.8
1.6
1.4
1.2
1.0
T = 25ºC
A
T=0ºC
A
T = -40ºC
A
f = 1.0MHz
1.5
US REVERSE CURRENT (nA)
R
I,INSTANTANE
250
200
150
100
10
1
T=75ºC
A
T = 25ºC
A
T = -40ºC
A
T=0ºC
A
0.1
0
20 40
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
60 80 100
Fig. 2 Typical Reverse Characteristics
0.8
100
d
P , POWER DISSIPATION (mW)
50
T
C , TOTAL CAPACITANCE (pF)
0.6
0.4
0.2
0.0
0
10
V , REVERSE VOLTAGE (V)
R
20
30
40
Fig.3 Typical Capacitance vs. Reverse Voltage
0
2505075100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 4 Power DeratingCurve
DS30132 Rev. 4 - 2 2 of 3 BAV70DW
www.diodes.com
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