DIODS BAV21, BAV20 Datasheet
Features
Glass Package for High Reliability
·
Planar Die Construction
·
Low Reverse Leakage Current
·
Also available in Surface Mount Package
·
(BAV20W and BAV21W)
BAV20 / BAV21
FAST SWITCHING DIODE
A
B
A
D
C
Mechanical Data
Case: DO-35, Glass
·
Leads: Solderable per MlL-STD-202,
·
Method 208
Marking: Cathode Band and Type Number
·
Weight: 0.13 grams (approx.)
·
Maximum Ratings
Characteristic Symbol BAV20 BAV21 Unit
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Forward Surge Current @ t = 1.0s
Repetitive Peak Forward Current (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ TA= 25°C unless otherwise specified
V
RRM
V
RWM
V
V
R(RMS)
I
FM
I
I
FSM
I
FRM
P
R
qJA
T
j,TSTG
DO-35
Dim Min Max
A
B
C
D
All Dimensions in mm
200 250 V
R
0
d
150 200 V
106 141 V
25.40 —
— 4.00
— 0.60
— 2.00
250 mA
200 mA
1.0 A
625 mA
500 mW
300 K/W
-65 to +175 °C
Electrical Characteristics
Characteristic Symbol
Maximum Forward Voltage
Maximum Peak Reverse Current BAV20
Dynamic Forward Resistance
Junction Capacitance
Reverse Recovery Time
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 8.0mm.
@ TA= 25°C unless otherwise specified
Min
BAV20
BAV21
BAV21
V
FM
I
R
r
f
C
t
rr
— — 1.0 V
——
— 5.0 — W
— 1.5 — pF
j
— — 50 ns
Typ Max
100
15
100
15
Unit
nA
mA
nA
mA
Test Condition
= 100mA
I
F
= 150V
V
R
V
= 150V, Tj= 100°C
R
V
= 200V
R
V
= 200V, Tj= 100°C
R
= 10mA
I
F
= 0, f = 1.0MHz
V
R
= IR= 30mA to IR= 3.0mA;
I
F
R
= 100 W
L
DS22006 Rev. H-2 1 of 2 BAV20 / BAV21
1000
100
0.3
(See Note 1)
T = 100 Cj°
F
I , INSTANTANEOUS FORWARD CURRENT (mA)
10
1.0
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0
V INSTANTANEOUS FORWARD VOLTAGE (V)
F,
Fig. 1 Typical Forward Characteristics
500
400
(See Note 1)
300
200
T = 25 Cj°
0.2
DC Current I
Current (rectif.) I
O
0.1
0
FO
I , I , INSTANTANEOUS FORWARD CURRENT (A)
0 30 60 90 120 150
T , AMBIENT TEMPERATURE ( C)
A
Fig. 2 Forward Current Derating
1000
°
100
R(T) R
10
F
°
d
P , POWER DISSIPATION (mW)
100
0
0 100 200
T , AMBIENT TEMPERATURE (ºC)
A
Fig. 3. Power Dissipation Derating
100
10
f
r , DYNAMIC RESISTANCE, (Ohms)
1
1
I , FORWARD CURRENT (mA)
F
10
Fig. 5 Dynamic Forward Resistance vs Forward Current
100
1
Reverse Voltage
BAV20 V = 150V
R
BAV21 V = 200V
REVERSE CURRENT RATIO [I /I (25 C)]
0
0
T JUNCTION TEMPERATURE ( C)
J,
100
R
°
Fig. 4 Relative Reverse Current vs Junction Temperature
1.8
T = 25 °C
j
1.6
1.4
1.2
1.0
0.8
0.6
j
C , CAPACITANCE (pF)
0.4
0.2
0
0.1 100101.0
V REVERSE VOLTAGE (V)
Fig. 6 Typical Junction Capacitance vs Reverse Voltage
R,
200
DS22006 Rev. H-2 2 of 2 BAV20 / BAV21
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