DIODS BAW156T, BAV170T, BAV199T, BAS156T, BAS116T Datasheet
DS30258 Rev. 5 - 2 1 of 3 BAS116T, BAW156T, BAV170T, BAV199T
BAS116T, BAW156T,
BAV170T, BAV199T
SURFACE MOUNT LOW LEAKAGE DIODE
· Case: SOT-523, Molded Plastic
· Case material - UL Flammability Rating
Classification 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Polarity: See Diagrams Below
· Marking: See Diagrams Below & Page 3
· Weight: 0.002 grams (approx.)
· Ordering Information: See Page 3
Mechanical Data
A
M
J
L
D
B
C
H
K
G
TOP VIEW
C
E
B
N
Features
Maximum Ratings
@ TA= 25°C unless otherwise specified
TCUDORPWEN
BAV199T Marking: 52
BAV170T Marking: 51BAW156T Marking: 53
BAS116T Marking: 50
· Ultra-Small Surface Mount Package
· Very Low Leakage Current
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
85
V
RMS Reverse Voltage
V
R(RMS)
60 V
Forward Continuous Current (Note 1) Single Diode
Double Diode
I
FM
215
125
mA
Repetitive Peak Forward Current
I
FRM
500
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0ms
@ t = 1.0s
I
FSM
4.0
1.0
0.5
A
Power Dissipation (Note 1)
P
d
150 mW
Thermal Resistance Junction to Ambient Air (Note 1)
R
qJA
833 °C/W
Operating and Storage Temperature Range
T
j,TSTG
-65 to +150 °C
SOT-523
Dim Min Max Typ
A
0.15 0.30 0.22
B
0.75 0.85 0.80
C
1.45 1.75 1.60
D
¾¾0.50
G
0.90 1.10 1.00
H
1.50 1.70 1.60
J
0.00 0.10 0.05
K
0.60 0.80 0.75
L
0.10 0.30 0.22
M
0.10 0.20 0.12
N
0.45 0.65 0.50
a
0° 8°¾
All Dimensions in mm
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
DS30258 Rev. 5 - 2 2 of 3 BAS116T, BAW156T, BAV170T, BAV199T
TCUDORPWEN
0
50
100
0 25 50 75 100 125 150
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1 Power DeratingCurve
150
200
250
10
1.0
100
1000
0.1
0.01
012
I , INSTANTANEOUS FORWARD CURRENT (mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Forward Characteristics
0.1
1
10
0
50
150
100
200
I , REVERSE CURRENT (nA)
R
T , AMBIENT TEMPERATURE ( )
A
Fig.3 Typical Reverse Characteristics
°C
V = 75V
R
Electrical Characteristics
@ TA= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 2)
V
(BR)R
85 ¾¾ V
I
R
= 100mA
Forward Voltage (Note 2)
V
F
¾¾
0.90
1.0
1.1
1.25
V
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
IF = 150mA
Leakage Current (Note 2)
I
R
¾¾
5.0
80
nA
nA
V
R
= 75V
V
R
= 75V, Tj = 150°C
Total Capacitance
C
T
¾ 2 ¾ pF
V
R
= 0, f = 1.0MHz
Reverse Recovery Time
t
rr
¾¾3.0 ms
I
F
= IR = 10mA,
I
rr
= 0.1 x IR,RL = 100W
Notes: 2. Short duration test pulse used to minimize self-heating effect.
0
20
40
60
80
100
120
140
160
0.00 1.40
1.20
1.00
0.80
0.60
0.40
0.20
T , AMBIENT TEMPERATURE (°C)
A
V , AVERAGE FORWARD VOLTAGE (V)
F(AVE)
Fig.4 Typical Forward Voltage vs Ambient Temperature
I = 1mA
F
I = 10mA
F
I = 50mA
F
I = 150mA
F
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