DIODS BAS85 Datasheet
Features
Features
For general applications
·
Low turn-on voltage
·
PN junction guard ring
·
BAS85
SILICON SCHOTTKY BARRIER DIODE
A
B
C
Mechanical Data
Glass case
·
Weight: 0.05g (approx)
·
Maximum Ratings
Continuous reverse voltage
Forward continuous current*
Peak forward current*
Surge forward current* @ tp = 1s
Power dissipation* @ TA= 65°C
Junction temperature
Operating temperature range
Storage temperature range
@ TA= 25°C unless otherwise specified
Characteristic Symbol Value Unit
T
I
P
T
V
I
F
I
FM
FSM
tot
T
A
STG
Min Max
A
B
C
All Dimensions in mm
R
j
3.4 3.6
1.40 1.50
0.20 0.40
30 V
200 mA
300 mA
600 mA
200 mW
125 °C
-65 to +125 °C
-65 to +150 °C
Electrical Characteristics
Characteristic Symbol Min Typ Max Unit
Reverse breakdown voltage
10 mA pulses
* Valid provided that electrodes are kept at ambient temperature.
@ Tj= 25°C unless otherwise specified
V
(BR)R
30 — —
V
DS30189 Rev. A-5 1 of 1 BAS85
Loading...