DIODS BAS70H-06, BAS70H-05, BAS70H-04 Datasheet
BAS70H/ -04/ -05/ -06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
Low Turn-on Voltage
·
Fast Switching
·
PN Junction Guard Ring for Transient and
·
ESD Protection
Mechanical Data
Case: SOT-23, Molded Plastic
·
Terminals: Solderable per MIL-STD-202,
·
Method 208
Polarity: See Diagrams
·
Approx. Weight: 0.008 grams
·
BAS70H Marking: K73
BAS70H-04 Marking: K74 BAS70H-05 Marking: K75
DISCONTINUED -
USE BAS70 SERIES
A
E
TOP VIEW
D
G
H
B
C
K
J
L
SOT-23
Dim Min Max
A
0.37 0.51
B
1.19 1.40
C
2.10 2.50
D
0.89 1.05
E
0.45 0.61
G
1.78 2.05
H
2.65 3.05
J
0.013 0.15
M
BAS70H-06 Marking: K76
K
0.89 1.10
L
0.45 0.61
M
0.076 0.178
All Dimensions in mm
Maximum Ratings and Electrical Characteristics, Single Diode
Characteristic Symbol BAS70 Unit
V
(BR)R
V
F
I
RM
C
j
t
rr
V
RRM
V
RWM
V
R
V
R(RMS)
I
F
I
FSM
P
d
R
qJA
T
j
T
STG
70 — V I
—
¾ 100 nA
¾ 2.0 pF
—5.0ns
-55 to +125 °C
-65 to +150 °C
410
1000
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ tp< 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Storage Temperature Range
Electrical Ratings
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Peak Reverse Current
Junction Capacitance
Reverse Recovery Time
Notes: 1. Valid Provided that terminals are kept at ambient temperature.
2. Test period <3000ms.
@ TA= 25°C unless otherwise specified
@ TA= 25°C unless otherwise specified
70 V
49 V
200 mA
600 mA
200 mW
625 K/W
= 10mA
R
<300µs, IF= 1.0mA
t
mV
p
t
<300µs, IF= 15mA
p
< 300µs, VR= 50V
t
p
= 0V, f = 1.0MHz
V
R
= IR= 10mA to IR= 1.0mA,
I
F
=100W
R
L
DS30190 Rev. 4 - 4 1 of 1 BAS70H/-04/-05/-06
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