DIODS BAS40W-06, BAS40W-05, BAS40W-04 Datasheet
Features
BAS40W/-04/-05/-06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
· Low Forward Voltage Drop
· Fast Switching
· Ultra-Small Surface Mount Package
· PN Junction Guard Ring for Transient and ESD
A
C
Protection
C
B
Mechanical Data
· Case: SOT-323, Molded Plastic
B
· Case Material - UL Flammability Rating
Classification 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
K
J
· Polarity: See Diagrams Below
· Marking: See Diagrams Below &Page 3
· Weight: 0.006 grams (approx.)
TOP VIEW
BAS40W Marking: K43 BAS40W-04 Marking: K44 BAS40W-05 Marking: K45
E
G
H
L
FD
SOT-323
Dim Min Max
0.25 0.40
A
1.15 1.35
B
2.00 2.20
C
0.65 Nominal
D
0.30 0.40
E
1.20 1.40
G
1.80 2.20
M
H
J
K
L
M
a
0.0 0.10
0.90 1.00
0.25 0.40
0.10 0.18
0° 8°
All Dimensions in mm
BAS40W-06 Marking: K46
Maximum Ratings
@ TA= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics
@ TA= 25°C unless otherwise specified
V
V
V
R(RMS)
I
R
T
RRM
RWM
V
R
I
FM
FSM
P
d
qJA
T
j
STG
40
28 V
200 mA
600
mA
200 mW
625 °C/W
-55 to +125 °C
-65 to +150 °C
V
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 2)
Forward Voltage (Note 2)
Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
V
(BR)R
V
F
I
R
C
T
t
rr
40 ¾ V
¾
380
1000
mV
mV
¾ 200 nA
¾ 5.0 pF
¾ 5.0 ns
= 10mA
I
R
IF = 1.0mA, tp < 300ms
I
= 40mA, tp < 300ms
F
VR = 30V
= 0, f = 1.0MHz
V
R
I
= IR = 10mA,
F
= 0.1 x IR,RL = 100W
I
rr
Notes: 1. Device mounted on FR4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30114 Rev. 8 - 2 1 of 3 BAS40W/-04/-05/-06
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250
O
1
O
O
10000
T = 125ºC
A
RWARD CURRENT (A)
US F
F
I , INSTANTANE
0.0001
0.1
0.01
0.001
3
T = -40ºC
A
T = 0ºC
A
T = 25ºC
A
T = 75ºC
A
T = 125ºC
A
0
0.2
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
0.4
0.6
0.8
Fig. 1 Typical Forward Voltage
f = 1MHz
1.0
US REVERSE CURRENT (nA)
R
I , INSTANTANE
1000
100
10
0.1
200
T = 75ºC
A
T = 25ºC
A
T=0ºC
A
1
T=-40ºC
A
0
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
10 20
30 40
Fig. 2 Typical Reverse Characteristics
2
150
100
1
T
C , TOTAL CAPACITANCE (pF)
0
0
10
V , REVERSE VOLTAGE (V)
R
20
30
40
Fig.3 Typical Capacitance
d
P , POWER DISSIPATION (mW)
50
0
0 100 200
T , AMBIENT TEMPERATURE (ºC)
A
Fig. 4 Power DeratingCurve, Total Package
DS30114 Rev. 8 - 2 2 of 3 BAS40W/-04/-05/-06
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