DIODS BAS40TW, BAS40DW-06, BAS40DW-05, BAS40DW-04, BAS40BRW Datasheet

Features
BAS40TW /DW-04 /DW-05 /
DW-06 /BRW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
Low Forward Voltage Drop
·
Fast Switching
·
Ultra-Small Surface Mount Package
·
PN Junction Guard Ring for Transient and
·
ESD Protection
Mechanical Data
Case: SOT-363, Molded Plastic
·
Terminals: Solderable per MIL-STD-202,
·
NEW PRODUCT
·
Weight: 0.006 grams (approx.)
·
A
1
C
1
BAS40DW-06
Marking: K46
SOT-363
Dim Min Max
A
Marking Indicates
C
KXX
H
K
J
B
Orientation
M
L
FD
A
B
C
D
E
G
H
J
K
L
M
0.10 0.30
1.15 1.35
2.00 2.20
0.65 Nominal
0.30 0.40
1.80 2.20
1.80 2.20
¾ 0.10
0.90 1.00
0.25 0.40
0.10 0.25
All Dimensions in mm
C
C
2
2
A
C
2
1
C
A
A
A
2
2
1
C
A
2
1
1
BAS40DW-05
Marking: K45
AC
1
A
A
C
2
2
AC
C
1
1
2
BAS40DW-04
Marking: K44
AC
1
A
C
C
1
AC
A
2
1
2
BAS40BRW Marking: K47
C
2
1
A
1
3
2
A
A
2
3
C
C
BAS40TW
Marking: K43
Maximum Ratings
@ TA= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t < 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
@ TA= 25°C unless otherwise specified
V V
V
R(RMS)
I
R
T
RRM RWM
V
I
FM
FSM
P
qJA
T
STG
Characteristic Symbol Min Max Unit Test Condition
Maximum Forward Voltage
Maximum Peak Reverse Current
Junction Capacitance
Reverse Recovery Time
V
FM
I
RM
C
j
t
rr
Notes: 1. Valid Provided that terminals are kept at ambient temperature.
R
d
,
j
-55 to +125
-65 to +125
¾
380
1000
¾ 200 nA
¾ 5.0 pF
¾ 5.0 ns
40 V
28 V
200 mA
600 mA
200 mW
625 K/W
°C
mVmVI
= 1.0mA, tp< 300ms
F
= 40mA, tp< 300ms
I
F
= 30V
V
R
= 0, f = 1.0MHz
V
R
= IR= 10mA,
I
F
= 0.1 x IR,RL= 100W
I
rr
DS30156 Rev. D-1 1 of 1 BAS40TW /DW-04 /DW-05 /DW-06 /BRW
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