DIODS 2N7002DW Datasheet
Features
Dual N-Channel MOSFET
·
Low On-Resistance
·
Low Gate Threshold Voltage
·
Low Input Capacitance
·
Fast Switching Speed
·
Low Input/Output Leakage
·
Ultra-Small Surface Mount Package
·
Mechanical Data
NEW PRODUCT
Case: SOT-363, Molded Plastic
·
Terminals: Solderable per MIL-STD-202,
·
Method 208
Terminal Connections: See Diagram
·
Marking: K72
·
Weight: 0.006 grams (approx.)
·
2N7002DW
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
SOT-363
A
G
1
KXX
G2D
H
S
1
C
B
1
L
FD
D
2
S
2
K
J
Dim Min Max
A
B
C
D
F
H
J
M
K
L
M
All Dimensions in mm
0.10 0.30
1.15 1.35
2.00 2.20
0.65 Nominal
0.30 0.40
1.80 2.20
¾ 0.10
0.90 1.00
0.25 0.40
0.10 0.25
Maximum Ratings
Characteristic Symbol 2N7002DW Units
Drain-Source Voltage
Drain-Gate Voltage RGS£ 1.0MW
Gate-Source Voltage (Note 1) Continuous
Drain Current (Note 1) Continuous
Total Power Dissipation
Derating above T
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width£300ms, duty cycle£2%.
= 25°C (Note 1)
A
@ TA= 25°C unless otherwise specified
Pulsed
Continuous @ 100°C
Pulsed
V
V
V
R
T
j,TSTG
DSS
DGR
GSS
I
D
P
qJA
60 V
60 V
±20
±40
115
73
800
d
200
1.60
625 K/W
-55 to +150
V
mA
mW
mW/°C
°C
DS30120 Rev. 2P-1 1 of 3 2N7002DW
Electrical Characteristics
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC= 25°C
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance @ Tj= 25°C
NEW PRODUCT
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width£300ms, duty cycle£2%.
@ TA= 25°C unless otherwise specified
@ T
@T
= 125°C
C
= 125°C
j
BV
I
I
V
GS(th)
R
DS (ON)
I
D(ON)
g
C
C
C
t
D(ON)
t
D(OFF)
DSS
DSS
GSS
FS
iss
oss
rss
60 70 ¾ V
¾¾
¾¾±10 nA
1.0 ¾ 2.0 V
¾
0.5 1.0 ¾ A
80 ¾¾mS
¾ 22 50 pF
¾ 11 25 pF
¾ 2.0 5.0 pF
¾ 7.0 20 ns
¾ 11 20 ns
3.2
4.4
1.0
500
7.5
13.5
V
GS
V
µA
DS
V
GS
V
DS=VGS
V
GS
W
VGS= 10V, ID= 0.5A
V
GS
V
DS
V
DS
f = 1.0MHz
V
DD
R
= 150W,V
L
R
GEN
= 0V, ID= 10mA
= 60V, VGS= 0V
= ±20V, VDS= 0V
, ID=-250mA
= 5.0V, ID= 0.05A
= 10V, VDS= 7.5V
=10V, ID= 0.2A
= 25V, VGS= 0V
= 30V, ID= 0.2A,
= 10V,
GEN
= 25W
DS30120 Rev. 2P-1 2 of 3 2N7002DW
Loading...