DIODS 2N7002 Datasheet

Features

Low On-Resistance: R

·

Low Gate Threshold Voltage

·

Low Input Capacitance

·

Fast Switching Speed

·

Low Input/Output Leakage

·

DS(ON)

Mechanical Data

Case: SOT-23, Molded Plastic

·

Terminals: Solderable per MIL-STD-202,

·

Method 208
Terminal Connections: See Diagram

·

Marking: K72, K7A

·

Weight: 0.008 grams (approx.)

·

2N7002

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT

TRANSISTOR

SOT-23

Dim Min Max

A

B

C

D

E

G

H

J

M

K

L

M

All Dimensions in mm

0.37 0.51

1.19 1.40

2.10 2.50

0.89 1.05

0.45 0.61

1.78 2.05

2.65 3.05

0.013 0.15

0.89 1.10

0.45 0.61

0.076 0.178

E

D

TOP VIEW

D

G

H

A

B

C

SG

K

J

L

Maximum Ratings

Characteristic Symbol Value Units

Drain-Source Voltage

Drain-Gate Voltage RGS£ 1.0MW

Gate-Source Voltage Continuous

Drain Current (Note 1) Continuous

Total Power Dissipation (Note 1)

Derating above T

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

Note: 1. Valid provided that terminals are kept at specified ambient temperature.

2. Short duration test pulse used to minimize self-heating effect.

A

@ TA= 25°C unless otherwise specified

Pulsed

Continuous @ 100°C

= 25°C

Pulsed

V

V

V

R

T

j,TSTG

DSS

DGR

GSS

I

D

P

qJA

d

60 V

60 V

±20
±40

115

73

800

200

1.60

625 °C/W

-55 to +150

V

mA

mW

mW/°C

°C

DS11303 Rev. K-2 1 of 3 2N7002

Electrical Characteristics

@ TA= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 2)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current @ TC= 25°C

@ T

= 125°C

C

Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

60 70 ¾ VV

¾¾

¾¾±10 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Static Drain-Source On-Resistance @ Tj= 25°C

@T

= 125°C

j

On-State Drain Current

Forward Transconductance

V

GS(th)

R

DS (ON)

I

D(ON)

g

1.0 ¾ 2.5 V V

¾

0.5 1.0 ¾ A

FS

80 ¾¾mS

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C

iss

C

oss

C

rss

¾ 22 50 pF

¾ 11 25 pF

¾ 2.0 5.0 pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Turn-Off Delay Time

t

D(ON)

t

D(OFF)

¾ 7.0 20 ns

¾ 11 20 ns

Note: 1. Valid provided that terminals are kept at specified ambient temperature.

2. Short duration test pulse used to minimize self-heating effect.

3.2

4.4

1.0

500

7.5

13.5

GS

V

µA

DS

V

GS

DS=VGS

V

GS

W

VGS= 10V, ID= 0.5A

V

GS

V

DS

V

DS

f = 1.0MHz

V

DD

R

= 150W,V

L

R

GEN

= 0V, ID= 10mA

= 60V, VGS= 0V

= ±20V, VDS= 0V

, ID=-250mA

= 5.0V, ID= 0.05A

= 10V, VDS= 7.5V

=10V, ID= 0.2A

= 25V, VGS= 0V

= 30V, ID= 0.2A,

= 10V,

GEN

= 25W

DS11303 Rev. K-2 2 of 3 2N7002