DIODS 1N5819, 1N5818, 1N5817 Datasheet
Features
· Schottky Barrier Chip
· Guard Ring Die Construction for
Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Current Capability and Low Forward
Voltage Drop
· For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
· Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
· Case: Molded Plastic
· Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
· Polarity: Cathode Band
· Weight: 0.3 grams (approx)
· Mounting Position: Any
· Marking: Type Number
1N5817 - 1N5819
1.0A SCHOTTKY BARRIER RECTIFIER
A A
Dim Min Max
A
B
C
D
All Dimensions in mm
B
C
D
DO-41 Plastic
25.40 ¾
4.06 5.21
0.71 0.864
2.00 2.72
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol 1N5817 1N5818 1N5819 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1) @ T
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage (Note 2) @ IF = 1.0A
Peak Reverse Leakage Current @TA = 25°C
at Rated DC Blocking Voltage (Note 2) @ T
Typical Total Capacitance (Note 3)
Typical Thermal Resistance Junction to Lead (Note 4)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Notes: 1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Short duration test pulse used to minimize self-heating effect.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
4. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5mm) lead length with 1.5 x 1.5" (38 x 38mm)
copper pads.
= 90°C
L
@ I
F
= 100°C
A
= 3.0A
V
V
V
R(RMS)
I
V
I
R
R
T
j,TSTG
RRM
RWM
V
R
I
O
FSM
FM
RM
C
T
qJL
qJA
@ TA = 25°C unless otherwise specified
20 30 40 V
14 21 28 V
1.0 A
25 A
0.450
0.750
0.550
0.875
1.0
10
110 pF
15
50
-65 to +125 °C
0.60
0.90
V
mA
°C/W
DS23001 Rev. 6 - 2 1 of 2 1N5817-1N5819
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1.0
O
O
30
O
O
)
0.8
0.6
0.4
0.2
(AV)
I , AVERAGE OUTPUT CURRENT (A)
Single Pulse Half-Wave
60 Hz Resistive or Inductive Load
0
10 40 60 80 100 120
T , LEAD TEMPERATURE (ºC)
L
Fig. 1 Forward Current DeratingCurve
25
20
140
150
RWARD CURRENT (A)
1.0
US F
F
I , NSTANTANE
0.1
1000
10
1N5817
1N5818
1N5819
T = 25ºC
j
Pulse Width = 300 ms
2% Duty Cycle
0
0.5 1.0 1.5 2.0 2.5
V , INSTANTANEOUS FORWARD VOLTAGE (V
F
Fig. 2 Typical Forward Characteristics
T = 25ºC
j
f=1MHz
V = 50mV p-p
sig
15
100
10
TAL CAPACITANCE (pF)
RWARD SURGE CURRENT (A)
T
C,T
5
8.3ms Single Half Sine-Wave
JEDEC Method
1 10 100
NUMBER OF CYCLES AT 60 Hz
10
0.1 1.0 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Total Capacitance
FSM
I , PEAK F
0
Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current
DS23001 Rev. 6 - 2 2 of 2 1N5817-1N5819
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