DIODS 1N5711WS-7 Datasheet
DS31033 Rev. 4 - 2 1 of 3 1N5711WS
1N5711WS
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
Characteristic Symbol 1N5711WS Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
70 V
RMS Reverse Voltage
V
R(RMS)
49 V
Forward Continuous Current
I
FM
15 mA
Power Dissipation (Note 1)
P
d
150 mW
Thermal Resistance, Junction to Ambient Air (Note 1)
R
qJA
650 °C/W
Operating Temperature Range
T
j
-55 to +125 °C
Storage Temperature Range
T
STG
-55 to +150 °C
Characteristic Symbol Min
Typ Max
Unit Test Condition
Reverse Breakdown Voltage (Note 2)
V
(BR)R
70 ¾¾ V
I
R
= 10mA
Reverse Leakage Current (Note 2)
I
R
¾¾200 nA
V
R
= 50V
Forward Voltage Drop (Note 2)
V
F
¾¾
0.41
1.00
V
I
F
= 1.0mA
I
F
= 15mA
Total Capacitance
C
T
¾¾2.0 pF
V
R
= 0V, f = 1.0MHz
Reverse Recovery Time
t
rr
¾¾1.0 ns
I
F
= IR= 5.0mA
I
rr
= 0.1 x IR,RL= 100W
Electrical Characteristics
@ TA= 25°C unless otherwise specified
Maximum Ratings
@ TA= 25°C unless otherwise specified
Mechanical Data
·
Low Forward Voltage Drop
·
Guard Ring Construction for Transient
Protection
·
Fast Switching Speed
·
Low Capacitance
·
Surface Mount Package Ideally Suited for
Automatic Insertion
·
Case: SOD-323, Plastic
·
Case material - UL Flammability Rating
Classification 94V-0
·
Moisture sensitivity: Level 1 per J-STD-020A
·
Terminals: Solderable per MIL-STD-202,
Method 208
·
Polarity: Cathode Band
· Marking: SA
· Weight: 0.004 grams (approx.)
A
B
C
D
E
G
a
H
J
Note: 1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Ordering Information
(Note 3)
Device Packaging Shipping
1N5711WS-7
SOD-323
3000/Tape and Reel
SOD-323
Dim Min Max
A 2.30 2.70
B 1.60 1.80
C 1.20 1.40
D 1.05 Typical
E 0.25 0.35
G 0.20 0.40
H 0.10 0.15
J 0.05 Typical
a 0° 8°
All Dimensions in mm
DS31033 Rev. 4 - 2 2 of 3 1N5711WS
0.01
0.1
1.0
10
0
0.5
1.0
I , FORWARD CURRENT (mA)
F
V , FORWARD VOLTAGE (V)
Fi
g
.2 Typical Forward Characteristics
F
0
50
0
25
50
75
125
100
150
P , POWER DISSIPATION (mW)
d
T , AMBIENT TEMPERATURE ( C)
Fi
g
. 1 DeratingCurve
A
°
100
200
150
R = 625ºC/W
θJA
0
100
80
60
40
20
0 0.5 1
I , FORWARD CURRENT (mA)
F
V , FORWARD VOLTAGE (V)
F
Fig.3Typical Forward Characteristics
0.01
0.1
1
10
100
0
10
20
30
40
50
I , REVERSE CURRENT (mA)
R
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Reverse Characteristics
T = 125°C
j
T = 150°C
j
T = 100°C
j
T = 75°C
j
T = 50°C
j
T = 25°C
j
0
1
2
01020 304050
C ,TOTAL CAPACITANCE (pF)
T
V , REVERSE VOLTAGE (V)
R
Fig. 5 Total Capacitance vs Reverse Voltage
f = 1MHz
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