DIODS 1N5711W Datasheet
Features
Low Forward Voltage Drop
·
Guard Ring Construction for Transient
·
Protection
Fast Switching Time
·
Low Reverse Capacitance
·
Mechanical Data
Case: SOD-123, Plastic
·
Case material - UL Flammability Rating
·
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
·
Terminals: Solderable per MIL-STD-202, Method
·
208
Polarity: Cathode Band
·
Marking: Date Code and Type Code, See Page 3
·
· Type Code: SA
· Weight: 0.01 grams (approx.)
· Ordering Information: See Below
1N5711W
SURFACE MOUNT SCHOTTKY BARRIER DIODE
SOD-123
Dim Min Max
A 3.55 3.85
H
A
B
C
D
G
E
J
a
B 2.55 2.85
C 1.40 1.70
D — 1.35
E 0.55 Typical
G0.25—
H 0.11 Typical
J — 0.10
a 0° 8°
All Dimensions in mm
Maximum Ratings
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Maximum Forward Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics
Reverse Breakdown Voltage (Note 2)
Reverse Leakage Current (Note 2)
Forward Voltage Drop (Note 2)
Total Capacitance
Reverse Recovery Time
Ordering Information
@ TA= 25°C unless otherwise specified
Characteristic Symbol 1N5711W Unit
@ TA= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
(Note 3)
V
(BR)R
I
R
V
F
C
T
t
rr
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
P
d
R
qJA
T
j
T
STG
70 ¾¾ VI
¾¾200 nA
¾¾
¾¾2.0 pF
¾¾1.0 ns
70 V
49 V
15 mA
333 mW
300 °C/W
-55 to +125 °C
-55 to +150 °C
0.41
1.00
V
= 10mA
R
= 50V
V
R
= 1.0mA
I
F
I
= 15mA
F
= 0V, f = 1.0MHz
V
R
= IR= 5.0mA
I
F
= 0.1 x IR,RL= 100W
I
rr
Device Packaging Shipping
1N5711W-7
Note: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
SOD-123
3000/Tape and Reel
DS11015 Rev. 4 - 2 1 of 3 1N5711W
2
100
10
g
350
g
300
d
P , POWER DISSIPATION (mW)
250
200
150
100
50
0
025
80
60
50
T , AMBIENT TEMPERATURE (°C)
A
Fi
.1 Power DeratingCurve
75
100
125 150
F
I , FORWARD CURRENT (mA)
µ
1.0
0.1
0.01
0 0.5 1.0
V , FORWARD VOLTAGE (V)
F
Fi
.2Typical Forward Characteristics
100
T = 150°C
j
T = 125°C
10
j
T = 100°C
j
40
F
I , FORWARD CURRENT (mA)
20
0
0 0.5 1
V , FORWARD VOLTAGE (V)
F
Fig.3Typical Forward Characteristics
j
C , CAPACITANCE (pF)
1
T = 75°C
j
T = 50°C
j
T = 25°C
j
I , REVERSE CURRENT ( A)
0.1
R
0.01
0
10
20
V , REVERSE VOLTAGE (V)
R
30
40
50
Fig. 4 Typical Reverse Characteristics
T=25Cj°
1
0
01020 304050
V , REVERSE VOLTAGE (V)
Fig.5Typ. Junction Capacitance vs Reverse Voltage
R
DS11015 Rev. 4 - 2 2 of 3 1N5711W
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