Features
Fast Switching Speed
·
Surface Mount Package Ideally Suited for
·
Automatic Insertion
For General Purpose Switching Applications
·
High Conductance
·
Mechanical Data
Case: SOD-123, Molded Plastic
·
Plastic Material: UL Flammability Rating
·
Classification 94V-0
Moisture Sensitivity: Level 1 perJ-STD-020A
·
Terminals: Solderable per MIL-STD-202,
·
Method 208
Polarity: Cathode Band
·
Marking: Date Code and Type Code: See Page 3
·
Type Code: T5
·
Weight: 0.01 grams (approx.)
·
· Ordering Information See Page 3
1N4448W
FAST SWITCHING SURFACE MOUNT DIODE
SOD-123
Dim Min Max
A 3.55 3.85
H
A
B
C
D
G
E
J
a
B 2.55 2.85
C 1.40 1.70
D — 1.35
E 0.55 Typical
G0.25—
H 0.11 Typical
J — 0.10
a 0° 8°
All Dimensions in mm
Maximum Ratings
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
Power Dissipation (Note 2)
Thermal Resistance Junction to Ambient Air (Note 2)
Operating and Storage Temperature Range
Electrical Characteristics
Reverse Breakdown Voltage (Note 1)
Forward Voltage (Note 1)
Peak Reverse Current (Note 1)
Total Capacitance
Reverse Recovery Time
@ TA= 25°C unless otherwise specified
Characteristic Symbol 1N4448W Unit
@ t = 1.0s
@ TA= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
V
(BR)R
V
FM
I
RM
C
t
rr
T
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
d
R
qJA
T
j,TSTG
75 ¾ VI
0.62
¾
¾
¾
¾
¾ 4.0 pF
¾ 4.0 ns
0.72
0.855
1.0
1.25
2.5
100 V
75
53 V
500 mA
250
4.0
2.0
400 mW
315 °C/W
-65 to +150 °C
50
30
25
V
mA
mA
mA
nA
V
mA
A
= 10mA
R
= 5.0mA
I
F
I
= 10mA
F
I
= 100mA
F
I
= 150mA
F
= 75V
V
R
= 75V, Tj= 150°C
V
R
= 25V, Tj= 150°C
V
R
V
= 20V
R
= 0, f = 1.0MHz
V
R
= IR= 10mA,
I
F
= 0.1 x IR,RL= 100W
I
rr
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Part mounted on FR-4 PC board with minimum recommended pad layout, which can be found on ourwebsite
at http://www/diodes.com/datasheets/ap02001.pdf.
DS12002 Rev. 9 - 2 1 of 3 1N4448W
5
400
300
100
Ta=25 C°
10
Ta=50 C°
200
d
100
P , POWER DISSIPATION (mW)
0
025
10.0
1.0
µ
0.10
0.01
R
I , REVERSE CURRENT ( A)
50
T , AMBIENT TEMPERATURE ( C)
A
Fi
. 1 Power DeratingCurve
Ta = 100 C°
75 100 125 150
°
Ta=75C°
Ta=50C°
Ta=25C°
Ta=0C°
Ta=-30 C°
RWARD CURRENT (mA)
F
I,F
rr
t , REVERSE RECOVERY TIME (nS)
Ta=85 C°
1
Ta=0C°
Ta = -30 C°
0.1
0 1000
200
V , FORWARD VOLTAGE (mV)
400
F
600
800
Fig. 2 Typical Forward Characteristics
.5
2.0
1.5
1.0
0.5
0.001
0
20
V , REVERSE VOLTAGE (V)
R
40
60 80
04
Fig. 3 Typical Reverse Characteristics
3
2
1
T
C , TOTAL CAPACITANCE (pF)
0
1
04
V , REVERSE VOLTAGE (V)
R
Fig. 5 Total Capacitance vs.
3
2
Reverse Volta
f = 1MHz
5
6
e
2
I , FORWARD CURRENT (mA)
F
Fig. 4 Reverse Recovery Time vs.
Forward Current
6
8
10
DS12002 Rev. 9 - 2 2 of 3 1N4448W
0