DIODS 1N4448, 1N4148 Datasheet
Features
Features
Fast Switching Speed
·
General Purpose Rectification
·
Silicon Epitaxial Planar Construction
·
1N4148 / 1N4448
FAST SWITCHING DIODE
A
B
A
Mechanical Data
Case: DO-35
·
Leads: Solderable per MIL-STD-202,
·
Method 208
Polarity: Cathode Band
·
Marking: Type Number
·
Weight: 0.13 grams (approx.)
·
Maximum Ratings
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
Power Dissipation (Note 1)
Derate Above 25°C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ TA= 25°C unless otherwise specified
Characteristic Symbol 1N4148 1N4448 Unit
@ t = 1.0ms
V
V
RRM
V
RWM
V
V
R(RMS)
I
I
FSM
P
R
T
j,TSTG
FM
I
RM
O
qJA
D
C
DO-35
Dim Min Max
A
B
C
D
All Dimensions in mm
R
300 500 mA
d
25.40 ¾
¾ 4.00
¾ 0.60
¾ 2.00
100 V
75 V
53 V
150
1.0
2.0
500
1.68
300 K/W
-65 to +175 °C
mA
mW
mW/°C
A
Electrical Characteristics
Characteristic Symbol Min Max Unit Test Condition
Maximum Forward Voltage 1N4148
Maximum Peak Reverse Current
Capacitance
Reverse Recovery Time
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
@ TA= 25°C unless otherwise specified
1N4448
1N4448
V
FM
I
RM
C
j
t
rr
¾
0.62
¾
¾
¾ 4.0 pF
¾ 4.0 ns
1.0
0.72
1.0
5.0
50
30
25
mA
mA
mA
nA
= 10mA
I
F
I
V
= 5.0mA
F
I
= 100mA
F
= 75V
V
R
V
= 70V, Tj= 150°C
R
V
= 20V, Tj= 150°C
R
V
= 20V
R
= 0, f = 1.0MHz
V
R
= 10mA to IR=1.0mA
I
F
V
= 6.0V, RL= 100W
R
DS12019 Rev. B-2 1 of 2 1N4148 / 1N4448
e
2
O
O
WARD CURRENT (mA)
R
US F
F
I , INSTANTANE
1000
100
10
1.0
0.1
0.01
01
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 1 Forward Characteristics
10,000
1000
R
I , LEAKAGE CURRENT (nA)
100
10
1
0 100 200
T , JUNCTION TEMPERATURE ( C)
j
Fig. 2, Leakage Current vs Junction Temperatur
V = 20V
R
°
DS12019 Rev. B-2 2 of 2 1N4148 / 1N4448
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