SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 2 - OCTOBER 1995
FEATURES
FZT851
FZT853
* Extremely low equivalent on-resistance; R
CE(sat)
44mΩ at 5A
C
* 6 Amps continuous current, up to 20 Amps peak current
* Very low saturation voltages
* Excellent h
characteristics specified up to 10 Amps
FE
C
B
PARTMARKING DETAILS - DEVICE TYPE IN FULL
COMPLEMENTARY TYPES - FZT851 FZT951
FZT853 FZT953
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FZT851 FZT853 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature
Range
=25°C P
amb
CM
C
T
CBO
CEO
EBO
tot
j:Tstg
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
150 200 V
60 100 V
66V
20 10 A
6A
3W
-55 to +150 °C
E
3 - 260
FZT853
ELECTRICAL CHARACTERISTICS T
= 25°C (atunless otherwise stated)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance C
Switching Times t
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
CBO
CER
R ≤1kΩ
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
obo
on
t
off
200 300 V
200 300 V
=100µA
I
C
I
=1µA, RB ≤1kΩ
C
100 120 V IC=10mA*
68 V
I
=100µA
E
101nAµAVCB=150V, T
V
=150V
CB
T
=100 °C
amb
101nAµAV
=150V, T
CB
V
=150V
CB
T
amb
=100 °C
10 nA VEB=6V
14
10050150
340
mV
IC=0.1A, IB=5mA*
mV
I
mV
I
=2A, IB=100mA*
C
=5A, IB=500mA*
C
1250 mV IC=5A, IB=500mA*
1100 mV IC=5A, VCE=2V*
100
100
50
20
200
200
100
30
300
IC=10mA, VCE=2V
I
=2A, VCE=2V*
C
I
=4A, VCE=2V*
C
I
=10A, VCE=2V*
C
130 MHz IC=100mA, VCE=10V
f=50MHz
35 pF VCB=10V, f=1MHz
50
1650
nsnsIC=1A, VCC=10V
I
=100mA,
B1=IB2
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
amb
amb
=25°C
=25°C
3 - 263 3 - 264
FZT853
TYPICAL CHARACTERISTICS
0.8
)
ts
l
0.6
o
V
(
-
)
0.4
at
CE(s
V
0.2
0
0.01 0.1 1 10
2.0
)
ts
l
o
1.5
- (V
at)
1.0
BE(s
V
0.5
IC/IB=10
IC/IB=50
Collector Current (Amps)
IC -
CE(sat)
V
Collector Current (Amps)
IC -
BE(sat)
V
Single Pulse Test Tamb=25 °C
10
IC/IB=10
IC/IB=50
v IC
v IC
100
1.6
n
1.4
1.2
Gai
d
e
1.0
is
l
a
0.8
m
r
0.6
No
-
0.4
FE
h
0.2
0
0.01 0.1 1 10
VCE=5V
VCE=1V
Collector Current (Amps)
IC -
100
100
300
200
- Typical Gain
FE
h
hFE v IC
10
VCE=1V
1000.0010.01 0.1
2.0
)
ts
l
o
1.5
V
(
-
BE
1.0
V
1
10
1000.001
0.5
0.01 0.1
Collector Current (Amps)
IC -
BE(on)
V
1
v IC
1
0.1
IC - Collector Current (A)
0.01
0.1
DC
1s
100ms
10ms
1ms
100µs
1
10 100
VCE - Collector Voltage (V)
Safe Operating Area
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