DIODES INCORPORATED FZT 653 ZET Datasheet

f
y
ECB
Product Line o
Green
100V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223
Features
 BV  I  I  Low Saturation Voltage V  Complementary PNP Type: FZT753  Lead-Free Finish; RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP capable (Note 4)
> 100V
CEO
= 3A High Continuous Current
C
= 6A Peak Pulse Current
CM
CE(sat)
SOT223
Top View
< 300mV @ 1A
B
Device S
Mechanical Data
 Case: SOT223  Case material: molded plastic. “Green” molding compound.  UL Flammability Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (approximate)
C
E
mbol
Diodes Incorporated
FZT653
C
Top View
Pin-Out
Ordering Information (Notes 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
FZT653TA AEC-Q101 FZT653 7 12 1,000
FZT653QTA Automotive FZT653 7 12 1,000
FZT653TC AEC-Q101 FZT653 13 12 4,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
FZT653
Document Number DS33150 Rev. 4 - 2
FZT
FZT
653
751
FZT653 = Product Type Marking Code
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Absolute Maximum Ratings (@T
Characteristic Symbol Value Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current
Thermal Characteristics (@T
Characteristic Symbol Value Unit
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads (Note 8) Operating and Storage Temperature Range
= +25°C, unless otherwise specified.)
A
V
CBO
V
CEO
V
EBO
I
C
I
CM
= +25°C, unless otherwise specified.)
A
(Note 6) (Note 7) 3 W (Note 6) (Note 7) 41.7
P
R
R
T
J, TSTG
θJA
θJL
D
120 V 100 V
7 V 2 A 6 A
2 W
62.5
12.9
-55 to +150
C/W C/W C/W
C
ESD Ratings (Note 9)
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For a device mounted with the collector lead on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
7. Same as note (6), except the device is mounted on 50mm x 50mm 2oz copper.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Characteristic Symbol Value Unit JEDEC Class
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Thermal Characteristics and Derating Information
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FZT653
V
10
CE(sat)
Limit
1
DC
1s
100m
Collector Current (A)
C
I
10m
100ms
T
=25°C
amb
25mm x 25mm
2oz FR4
110
10ms
1ms
10s
VCE Collector-Emitter Voltage (V)
Safe Operating Area
70
T
=25°C
60
50
40
30
20
10
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
amb
25mm x 25mm
2oz FR4
D=0.5
D=0.2
Singl e Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedance
V
10
CE(sat)
Limit
1
DC
1s
100m
Collector Current (A)
C
10m
I
100ms
T
=2C
amb
50mm x 50mm
2oz FR4
110
10ms
1ms
100µs
VCE Collector-Emitter Voltage (V)
Safe Operating Area
50
T
=25°C
40
30
20
10
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
amb
50mm x 50mm
2oz FR4
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedance
Single Pulse
T
=25°C
100
10
25mm x 25mm
1
100µ 1m 10m 100m 1 10 100 1k
Max Power Dissipation (W)
2oz FR4
Pulse Width (s)
amb
50mm x 50mm
2oz FR4
Pulse Power Dissipation
FZT653
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3.0
2.5
2.0
1.5
1.0
0.5
0.0 0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
50mm x 50mm
2oz FR4
25mm x 25mm
2oz FR4
Derating Curve
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FZT653
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage (Note 10)
Base-Emitter Saturation Voltage (Note 10) Base-Emitter Turn-On Voltage (Note 10)
DC Current Gain (Note 10)
Current Gain-Bandwidth Product (Note 10)
Switching Times
Output Capacitance (Note 10)
Note: 10. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat
V
BE(on
h
FE
f
T

t
on
t

off
C
obo
120 100
7

 
   
< 1
100 nA
10 µA
< 1 100 nA
0.13
0.23 0.5

0.3
0.9 1.25 V
0.8 1.0 V
70 200
100 200 300
55 110 25 55
140 175
80
 I  I
1200 -
30 pF
V V V
V
MHz
ns
IC = 100µA IC = 1mA IE = 100µA V
= 100V
CB
V
= 100V, TA = +125°C
CB
V
= 5.6V
EB
I
= 1A, IB = 100mA
C
IC = 2A, IB = 200mA IC = 1A, IB = 100mA IC = 1A, V
= 50mA, V
I
C
I
= 500mA, V
C
= 1A, V
C
= 2A, V
C
V
CE
= 2V
CE
= 2V
CE
= 2V
CE
= 2V
CE
= 2V
CE
= 5V, IC = 100mA,
f = 100MHz I
= 500mA, V
C
I
= -I
B1
B2
V
= 10V, f = 1MHz
CB
CC
= 50mA
= 10V,
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Typical Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
FZT653
Document Number DS33150 Rev. 4 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D
b1
Q
C
Dim Min Max Typ
e1
b
e
Gauge
Plane
Seating
Plane
0.25
E1
E
L
°
0
1
-
°
0
A
A1
7
°
SOT223
A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70
C 0.20 0.30 0.25
D 6.45 6.55 6.50
E 3.45 3.55 3.50 E1 6.90 7.10 7.00
e — — 4.60 e1 — — 2.30
L 0.85 1.05 0.95
Q 0.84 0.94 0.89
All Dimensions in mm
°
7
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y1
X1
C1
Y2
X2
C2
Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device Terminals and PCB tracking.
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Dimensions Value (in mm)
X1 3.3 X2 1.2 Y1 1.6 Y2 1.6 C1 6.4 C2 2.3
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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FZT653
FZT653
Document Number DS33150 Rev. 4 - 2
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