diodes incorporated BC807-16, BC807 -25, BC807 -40 Service Manual
查询BC807-16-7-F供应商
BC807-16/ -25/ -40
PNP SURFACE MOUNT TRANSISTOR
Features
• Ideally Suited for Automatic Insertion
• Epitaxial Planar Die Construction
• For Switching, AF Driver and Amplifier Applications
C
• Complementary NPN Types Available (BC817)
• Lead Free/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
B
E
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe)
• Pin Connections: See Diagram
• Ordering Information: See Page 3
• Marking Information: See Page 3
- BC807-16 5A, K5A
- BC807-25 5B, K5B
- BC807-40 5C, K5C
• Weight: 0.008 grams (approximate)
Maximum Ratings @T
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Peak Collector Current I
Peak Emitter Current I
Power Dissipation at T
Thermal Resistance, Junction to Substrate Backside (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range Tj, T
= 50°C (Note 1) P
SB
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
CEO
EBO
C
CM
EM
d
R
B
θJSB
R
θJA
STG
-45 V
-5.0 V
-500 mA
-1000 mA
-1000 mA
310 mW
320 °C/W
403 °C/W
-65 to +150 °C
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α
0° 8°
All Dimensions in mm
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic (Note 2) Symbol Min Typ Max Unit Test Condition
DC Current Gain Current Gain Group -16
-25
-40
Current Gain Group -16
h
FE
-25
-40
Collector-Emitter Saturation Voltage V
Base-Emitter Voltage V
Collector-Emitter Cutoff Current I
Emitter-Base Cutoff Current I
Gain Bandwidth Product f
Collector-Base Capacitance C
Notes: 1. Device mounted on ceramic substrate 0.7mm; 2.5cm2 area.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
CE(SAT)
BE
CES
EBO
T
CBO
100
160
250
60
100
170
—
250
400
600
—
—
—
VCE = 1.0V, IC = 100mA
—
VCE = 1.0V, IC = 300mA
— — -0.7 V IC = 500mA, IB = 50mA B
— — -1.2 V VCE = 1.0V, IC = 300mA
— —
-100
-5.0
nA
VCE = 45V
µA
VCE = 25V, Tj = 150°C
— — -100 nA VEB = 4.0V
100 — — MHz
VCE = 5.0V, IC = 10mA,
f = 50MHz
— — 12 pF VCB = 10V, f = 1.0MHz
DS11208 Rev. 15 - 2 1 of 3
www.diodes.com
BC807-16/-25/-40
© Diodes Incorporated
DS11208 Rev. 15 - 2 2 of 3
www.diodes.com
BC807-16/-25/-40
© Diodes Incorporated
Loading...