DIODES INCORPORATED 2N 7002-7-F Datasheet

2N7002

Document number: DS11303 Rev. 37 - 2

1 of 5

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October 2019

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2N7002

Product Summary

BV

DSS

R

DS(ON)

Max

ID Max

TA = +25°C

60V

7.5Ω @ VGS = 5V

210mA

Description and Applications

This MOSFET has been designed to minimize the on-state resistance
(R

DS(ON)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

 Motor Control
 Power Management Functions

Features and Benefits

 Low On-Resistance
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Small Surface Mount Package
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Notes 3)
 The 2N7002Q is suitable for automotive applications

requiring specific change control; it is AEC-Q101 qualified,
PPAP capable, and manufactured in IATF 16949 certified
facilities.

 https://www.diodes.com/quality/product-definitions/

Mechanical Data

 Case: SOT23
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish Matte Tin Plated Leads. Solderable per MIL-

STD-202, Method 208

 Terminal Connections: See Diagram
 Weight: 0.009 grams (Approximate)

Part Number

Compliance

Case

Packaging

2N7002-7-F

Standard

SOT23

3,000/Tape & Reel

2N7002-13-F

Standard

SOT23

10,000/Tape & Reel

2N7002Q-7-F

Automotive

SOT23

3,000/Tape & Reel

Year

2002 ~ 2018

2019

2020

2021

2022

2023

2024

2025

2026

Code

N ~ F G H I J K L M N

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1 2 3 4 5 6 7 8 9 O N

D

SOT23

Top View

Equivalent Circuit

Top View

D

G

S

K72 = Product Type Marking Code
YM = Date Code Marking
Y or = Year (ex: G = 2019)
M = Month (ex: 9 = September)

Source

Gate

Drain

Y

K72

YM

e3

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Ordering Information (Note 4)

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Lead-free.

Marking Information

Date Code Key

2N7002

Document number: DS11303 Rev. 37 - 2

2 of 5

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October 2019

© Diodes Incorporated

2N7002

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

60

V

Drain-Gate Voltage R

GS

 1.0M

V

DGR

60

V

Gate-Source Voltage Continuous
Pulsed

V

GSS

±20

±40

V

Continuous Drain Current (Note 5) VGS = 10V

Steady

State

TA = +25°C
TA = +85°C

TA = +100°C

ID

170
120
105

mA

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C
TA = +85°C

TA = +100°C

ID

210
150
135

mA

Maximum Continuous Body Diode Forward Current (Note 6) Pulsed

Continuous

IS

0.5
2

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

800

mA

Characteristic

Symbol

Value

Unit

Total Power Dissipation

(Note 5)

PD

370

mW

(Note 6)

540

Thermal Resistance, Junction to Ambient

(Note 5)

R

θJA

348

°C/W

(Note 6)

241

Thermal Resistance, Junction to Case

(Note 6)

R

θJC

91

Operating and Storage Temperature Range

T

J, TSTG

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BV

DSS

60

70  V

V

GS

= 0V, ID = 10µA

Zero Gate Voltage Drain Current @ TC = +25°C
@ TC = +125°C

I

DSS





1.0

500

µA

V

DS

= 60V, VGS = 0V

Gate-Body Leakage

I

GSS





±10

nA

V

GS

= ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

V

GS(TH)

1.0  2.5

V

V

DS

= VGS, ID = 250µA

Static Drain-Source On-Resistance @ T

J

= +25°C

@ T

J

= +25°C

@ TJ = +125°C

R

DS(ON)



3.2



4.4

7.5

5.0

13.5



V

GS

= 5.0V, ID = 0.05A

V

GS

= 10V, ID = 0.5A

V

GS

= 10V, ID = 0.5A

On-State Drain Current

I

D(ON)

0.5

1.0  A

V

GS

= 10V, VDS = 7.5V

Forward Transconductance

gFS

80





mS

V

DS

=10V, ID = 0.2A

Diode Forward Voltage

VSD



0.78

1.5

V

V

GS

= 0V, IS = 115mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

C

iss



22

50

pF

VDS = 25V, VGS = 0V
f = 1.0MHz

Output Capacitance

C

oss



11

25

pF

Reverse Transfer Capacitance

C

rss



2.0

5.0

pF

Gate Resistance

Rg



120  Ω

VDS = 0V, VGS = 0V,
f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

Qg



223



pC

VDS = 10V, ID = 250mA
Gate-Source Charge

Qgs



82



Gate-Drain Charge

Qgd



178



SWITCHING CHARACTERISTICS (Note 8)

Turn-On Delay Time

t

D(ON)



2.8



ns

V

DD

= 30V, ID = 0.2A,

RL = 150, V

GEN

= 10V,

R

GEN

= 25

Turn-On Rise Time

tR



3.0



Turn-Off Delay Time

t

D(OFF)



7.6



Turn-Off Fall Time

tF



5.6



Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

2N7002

Document number: DS11303 Rev. 37 - 2

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2N7002

0

0.2

0.4

0.6

0.8

1.0

0 1 2

3

4

5

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 On-Region Characteristics

DS

I , DRAIN-SOURCE CURRENT (A)

D

0

1

2

3

4

5

0 0.2

I , DRAIN CURRENT (A)

Fig. 2 On-Resistance vs. Drain Current

D

6

7

0.4 0.6 0.8 1.0

R , NORMALIZED DRAIN-SOURCE

ON-RESISTANCE ( )

DS(ON)



1.0

1.5

2.0

2.5

3.0

-55 -30 -5 20 45 70 95 120 145
T, JUNCTION TEMPERATURE ( C)

Fig. 3 On-Resistance vs. Junction Temperature

j

°

V = 10V,
I = 200mA

GS

D

R , STATIC DRAIN-SOURCE

ON-RESISTANCE ( )

DS(ON)



0

V , GATE TO SOURCE VOLTAGE (V)

Fig. 4 On-Resistance vs. Gate-Source Voltage

GS

I = 50mA

D

I = 500mA

D

1

2

3

4

5

6

0 2 4 6 8 10 12 14 16 18

R , NORMALIZED DRAIN-SOURCE

ON-RESISTANCE ( )

DS(ON)



0

2

1

4

3

0 0.2

0.4

0.6 0.8

1

V GATE SOURCE CURRENT (V)

GS,

I , DRAIN CURRENT (A)

Fig. 5 Typical Transfer Characteristics

D

6
5

8
7

10

9

0

50

100

150

200

250

300

350

0 25

50 75

100

125 150 175

200

P , POWER DISSIPATION (mW)

d

T , AMBIENT TEMPERATURE ( C)

Fig. 6 Max Power Dissipation vs. Ambient Temperature

A

°

400

2N7002

Document number: DS11303 Rev. 37 - 2

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© Diodes Incorporated

2N7002

SOT23

Dim

Min

Max

Typ A 0.37

0.51

0.40 B 1.20

1.40

1.30 C 2.30

2.50

2.40 D 0.89

1.03

0.915

F

0.45

0.60

0.535

G

1.78

2.05

1.83 H 2.80

3.00

2.90

J

0.013

0.10

0.05

K

0.890

1.00

0.975

K1

0.903

1.10

1.025

L

0.45

0.61

0.55

L1

0.25

0.55

0.40

M

0.085

0.150

0.110 a 0°

8°

--

All Dimensions in mm

Dimensions

Value (in mm)

C

2.0 X 0.8

X1

1.35 Y 0.9

Y1

2.9

J

K1

K

L1

GAUGE PLANE

0.25

H

L

M

All 7°

A

C

B

D

G

F

a

X

Y

Y1

C

X1

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT23

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT23

2N7002

Document number: DS11303 Rev. 37 - 2

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October 2019

© Diodes Incorporated

2N7002

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