diodes incorporated 1N5711WS Service Manual
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Features
Low Forward Voltage Drop
·
Guard Ring Construction for Transient
·
Protection
Fast Switching Speed
·
Low Capacitance
·
Surface Mount Package Ideally Suited for
·
Automatic Insertion
Mechanical Data
Case: SOD-323, Plastic
·
Case material - UL Flammability Rating
·
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
·
Terminals: Solderable per MIL-STD-202,
·
Method 208
Polarity: Cathode Band
·
· Marking: SA
· Weight: 0.004 grams (approx.)
1N5711WS
SURFACE MOUNT SCHOTTKY BARRIER DIODE
SOD-323
Dim Min Max
A 2.30 2.70
H
A
B
C
D
G
E
J
a
B 1.60 1.80
C 1.20 1.40
D 1.05 Typical
E 0.25 0.35
G 0.20 0.40
H 0.10 0.15
J 0.05 Typical
a 0° 8°
All Dimensions in mm
Maximum Ratings
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics
Reverse Breakdown Voltage (Note 2)
Reverse Leakage Current (Note 2)
Forward Voltage Drop (Note 2)
Total Capacitance
Reverse Recovery Time
Ordering Information
@ TA= 25°C unless otherwise specified
Characteristic Symbol 1N5711WS Unit
@ TA= 25°C unless otherwise specified
Characteristic Symbol Min
(Note 3)
V
(BR)R
I
R
V
F
C
T
t
rr
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
P
d
R
qJA
T
j
T
STG
Typ Max
70 ¾¾ V
¾¾200 nA
¾¾
¾¾2.0 pF
¾¾1.0 ns
-55 to +125 °C
-55 to +150 °C
0.41
1.00
70 V
49 V
15 mA
150 mW
650 °C/W
Unit Test Condition
I
= 10mA
R
= 50V
V
R
= 1.0mA
I
F
V
I
= 15mA
F
= 0V, f = 1.0MHz
V
R
= IR= 5.0mA
I
F
I
= 0.1 x IR,RL= 100W
rr
Device Packaging Shipping
1N5711WS-7
Note: 1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
SOD-323
3000/Tape and Reel
DS31033 Rev. 4 - 2 1 of 3 1N5711WS
10
g
g
200
150
100
2
100
d
P , POWER DISSIPATION (mW)
50
R = 625ºC/W
θJA
1.0
0.1
F
I , FORWARD CURRENT (mA)
0
0
25
T , AMBIENT TEMPERATURE ( C)
50
A
Fi
75
100
. 1 DeratingCurve
80
60
40
F
I , FORWARD CURRENT (mA)
20
0
0 0.5 1
V , FORWARD VOLTAGE (V)
F
Fig.3Typical Forward Characteristics
125
0.01
150
°
0
V , FORWARD VOLTAGE (V)
F
Fi
.2 Typical Forward Characteristics
0.5
1.0
100
T = 150°C
j
T = 125°C
j
T = 100°C
j
T = 75°C
j
T = 50°C
j
T = 25°C
j
R
I , REVERSE CURRENT (mA)
10
1
0.1
0.01
0
10
20
V , REVERSE VOLTAGE (V)
R
30
40
50
Fig. 4 Typical Reverse Characteristics
f = 1MHz
1
T
C ,TOTAL CAPACITANCE (pF)
0
01020 304050
V , REVERSE VOLTAGE (V)
Fig. 5 Total Capacitance vs Reverse Voltage
R
DS31033 Rev. 4 - 2 2 of 3 1N5711WS
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