Diodes ZXTR2008K User Manual

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Description
The ZXTR2008K monolithically integrates a transistor, Zener diode
and resistor to function as a high voltage linear regulator. The device
regulates with an 8.2V nominal output at 15mA. It is designed for use
in high voltage applications where standard linear regulators cannot
be used. This function is fully integrated into a TO252 package,
minimizing PCB area and reducing number of components when
compared with a multi-chip discrete solution.
Applications
Supply voltage regulation in:
Networking
Telecom
Power Over Ethernet (PoE)
TO252 (DPAK)
Top View
Internal Device
Schematic
ZXTR2008
100V INPUT, 8.2V 50mA REGULATOR TRANSISTOR
Features
Series Linear Regulator Using Emitter-Follower Stage
Input Voltage = 12V to 100V
Output Voltage = 8.2V ±10%
Fully integrated into a TO252 package
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic. “Green” Molding Compound
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.34 grams (approximate)
Pin Name Pin Function
VIN Input Supply
GND Power Ground
VOUT Voltage Output
Top View
Pin-Out
Ordering Information (Note 4)
Product Package Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXTR2008K-13 TO252 (DPAK) ZXTR 2008 13 16 2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
<1000ppm antimony compounds.
Marking Information
ZXTR2008K
Document number: DS36329 Rev. 2 - 2
ZXTR
2008
YYWW
www.diodes.com
ZXTR2008 = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year, (ex: 13 = 2013) WW = Week Code 01 - 52
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Absolute Maximum Ratings (Voltage relative to GND, @T
Characteristic Symbol Value Unit
Input Voltage
Continuous Input & Output Current
Peak Pulsed Input & Output Current
Maximum Voltage applied to V
V
OUT
Maximum Current at VIN = 48V (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Continuous Output Current (Note 7)
Pulsed Output Current
(Note 8)
(Note 9) 190
Thermal Characteristics
= +25°C, unless otherwise specified.)
A
V
IN
I
IN, IOUT
I
IM, IOM
OUT(max)
-0.3 to 100 V
550 mA
2 A
14.5 V
I
OUT
I
OM
55 mA
900
ZXTR2008
mA
Characteristic Symbol Value Unit
Power Dissipation
Thermal Resistance, Junction to Ambient
(Note 5) (Note 6) 1.1 (Note 5)
(Note 6) 90 Thermal Resistance, Junction to Lead (Note 10) Thermal Resistance, Junction to Case (Note 10) Recommended Operating Junction Temperature Range Maximum Operating Junction and Storage Temperature Range
P
R
R
R
T
T
J, TSTG
D
θJA
θJL
θJC
J
2.3
44
8.4
14.6
-40 to +125
-65 to +150
W
°C/W
°C °C
ESD Ratings (Note 11)
Electrostatic Discharge – Human Body Model ESD HBM 4000 V 3A Electrostatic Discharge – Machine Model ESD MM 400 V C
Notes: 5. For a device mounted with the exposed VIN pad on 50mm x 50mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady-state.
6. Same as note 5, except mounted on 15mm x 15mm 1oz copper.
7. Same as note 5, whilst operating at V
8. Same as note 5, except measured with a single pulse width = 100µs and V
9. Same as note 5, except measured with a single pulse width = 10ms and V
10.
11. Refer to JEDEC specification JESD22-A114 and JESD22-A115
Characteristics Symbols Value Unit JEDEC Class
= 48V. Refer to Safe Operating Area for other Input Voltages.
IN
R
= Thermal resistance from junction to solder-point (on the exposed VIN pad).
θJL
R
= Thermal resistance from junction to the top of case.
θJC
IN
= 48V.
IN
= 48V.
.
ZXTR2008K
Document number: DS36329 Rev. 2 - 2
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Thermal Characteristics and Derating Information
3.0
T
J
2.5
2.0
= 125°C = 150°C
50mm x 50mm
1oz Cu
1.5
1.0
0.5
0.0
Max Power Dissipation (W)
15mm x 15mm
1oz Cu
0 25 50 75 100 125 150
Ambient Temperature (°C)
Derating Curve
40
30
20
50 mm x 50mm
1oz Cu
D=0.5
D=0.2
Single Pulse
ZXTR2008
Steady state D.C. T
= 25°C
A
125°C
T
15 mm x 1 5mm
1oz Cu
J
100
50 mm x 5 0mm
1oz Cu
10
12 20 30 40 50 60 70 80 90 100
Input Voltage (V)
Continuous Output Current (mA)
Safe Operating Area
100
Single Pulse
TA = 25°C
TJ 125°C
50 mm x 50mm
10
1oz Cu
10
D=0.05
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k 10k
Thermal Resistance (°C/W)
Pulse Width (s)
Transient Thermal Impedance
1
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
ZXTR2008K
Document number: DS36329 Rev. 2 - 2
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