Diodes ZXTPS718MC User Manual

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20V PNP LOW SATURATION TRANSISTOR AND

40V, 1A SCHOTTKY DIODE COMBINATION

Features and Benefits

PNP Transistor

• BV

• I

• Low Saturation Voltage (-220mV max @ -1A)

• R

• h

Schottky Diode

• BV

• I

• Low V

• Fast switching due to Schottky barrier

• Low profile 0.8mm high package for thin applications

• R

θJA

• 6mm

• Lead-Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

> -20V

CEO

= -3.5A Continuous Collector Current

C

= 64mΩ for a low equivalent On-Resistance

SAT

characterized up to -6A for high current gain hold up

FE

> 40V

R

= 3A Average Peak Forward Current

FAV

< 500mV (@1A) for reduced power loss

F

efficient, 40% lower than SOT26

2

footprint, 50% smaller than TSOP6 and SOT26

DFN3020B-8

Top View

Bottom View

B1

PNP Transistor Schottky Diode

Mechanical Data

• Case: DFN3020B-8

• Case Material: Molded Plastic, “Green” Molding Component

• Terminals: Pre-Plated NiPdAu leadframe

• Nominal package height: 0.8mm

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Weight: 0.013 grams (approximate)

Applications

• DC – DC Converters

• Charging circuits

• Mobile phones

• Motor control

• Portable applications

C1

E1

Equivalent Circuit

A2

Diodes Incorporated

K2 K2 C1 C1

K2 C1

A2 n/c E1 B1

Bottom View

Pin-Out

n/c = Not Connected internally

ZXTPS718MC

Pin 1

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTPS718MCTA 2S1 7 8 3000

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website http://www.diodes.com

3. For packaging details, go to our website http://www.diodes.com

Marking Information

ZXTPS718MC

Document Number DS31937 Rev. 3 - 2

2S1

www.diodes.com

2S1 = Product type marking code Top view, dot denotes pin 1

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ZXTPS718MC

PNP - Maximum Ratings @ T

= 25°C unless otherwise specified

A

Parameter Symbol Limit Unit

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current

Continuous Collector Current Base Current

V

CBO

V

CEO

V

EBO

I (Notes 4 and 7) (Notes 5 and 7) -3.9

CM

I

C

B

-25

-20

-7

-6

-3.5

-1

V

A

PNP - Thermal Characteristics @ T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

1.5 12

2.45

19.6

1.13 8

1.7

13.6

83.3

W

mW/°C

°C/W

Power Dissipation Linear Derating Factor

Thermal Resistance, Junction to Ambient

(Notes 4 & 7) (Notes 5 & 7)

P

D

(Notes 6 & 7) (Notes 6 & 8)

(Notes 4 & 7) (Notes 5 & 7) 51.0 (Notes 6 & 7) 111

R

JA

θ

(Notes 6 & 8) 73.5 Thermal Resistance, Junction to Lead (Note 9) Operating and Storage Temperature Range

Notes: 4. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device

is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector and cathode pads connected to each half.

5. Same as note (4), except the device is measured at t <5 sec.

6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm

7. For a dual device with one active die.

8. For dual device with 2 active die running at equal power.

9. Thermal resistance from junction to solder-point (on the exposed collector pad).

R

JL

T

, T

J

STG

2

) FR4 PCB with high coverage of single sided 1oz copper.

17.1

-55 to +150

°C

ZXTPS718MC

Document Number DS31937 Rev. 3 - 2

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PNP - Thermal Characteristics

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ZXTPS718MC

10

V

CE(SAT)

Limited

1

0.1

0.01

Collector Current (A)

C

I

0.1 1 10

DC

1s

8sqcm 2oz Cu One active die

Single Pulse, T

100ms

=25°C

amb

10ms

1ms

100us

VCE Collector-Emitter Voltage (V)

Safe Operating Area

8sqcm 2oz Cu

80

One active die

60

D=0.5

40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Single Pulse

D=0.05

D=0.1

2.0

T

=25°C

amb

1.5

1.0

10sqcm 1oz Cu Two active die

8sqcm 2oz Cu One active die

0.5

10sqcm 1oz Cu

0.0 0 25 50 75 100 125 150

Max Power Di ssip at i o n (W)

One active die

Temperature (°C)

Derat ing C urve

225 200 175 150 125 100

75

2oz Cu

50

One active die

25

Thermal Resistance (°C/W)

0

0.1 1 10 100

1oz Cu One active die

1oz Cu Two active die

2oz Cu Two active die

Board Cu Area (sqcm)

Transient Thermal Impedance

Thermal Resistance v Board Area

3.5

3.0

2.5

2.0

T

=25°C

amb

T

=150°C

j max

Continuous

2oz Cu One active die

2oz Cu Two active die

1.5

1.0

Dissipation (W)

D

0.5

P

0.0

0.1 1 10 100

1oz Cu One active die

1oz Cu Two active die

Board Cu Area (sqcm)

Power Dissipation v Bo ard Area

ZXTPS718MC

Document Number DS31937 Rev. 3 - 2

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ZXTPS718MC

Schottky - Maximum Ratings @ T

= 25°C unless otherwise specified

A

Parameter Symbol Limit Unit

Continuous Reverse Voltage Continuous Forward Current

Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current

V

R

I D = 0.5 Pulse width ≤ 300µs t ≤ 100µs t ≤ 10ms 7

I

FRM

I

FSM

F

40 V

1.85 3

A

12

Schottky - Thermal Characteristics @ T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

1.2 12

2

20

0.9

9

1.36

13.6

83.3

W

mW/°C

°C/W

Power Dissipation Linear Derating Factor

Thermal Resistance, Junction to Ambient

(Notes 10 & 13) (Notes 11 & 13)

P

D

(Notes 12 & 13) (Notes 12 & 14)

(Notes 10 & 13) (Notes 11 & 13) 51.0 (Notes 12 & 13) 111

R

JA

θ

(Notes 12 & 14) 73.5 Thermal Resistance, Junction to Lead (Note 15) Storage Temperature Range Maximum Junction Temperature

Notes: 10. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device

is measured when operating in a steady-state condition. The heatsink is split in half with the exposed cathode and collector pads connected to each half.

11. Same as note (10), except the device is measured at t <5 sec.

12. Same as note (10), except the device is surface mounted on 31mm x 31mm (10cm

13. For a dual device with one active die.

14. For dual device with 2 active die running at equal power.

15. Thermal resistance from junction to solder-point (on the exposed cathode pad).

R

JL

T

STG

T

J

2

) FR4 PCB with high coverage of single sided 1oz copper.

20.2

-55 to +150 125

°C

ZXTPS718MC

Document Number DS31937 Rev. 3 - 2

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Schottky - Thermal Characteristics

8sqcm 2oz Cu

80

One active die

60

D=0.5

40

D=0.2

20

Thermal Resistance (°C/W)

0 100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

Product Line o

Diodes Incorporated

1.5

10sqcm 1oz Cu Two active die

1.0

0.5

0.0 0 25 50 75 100 125

Max Power Dissipation (W)

Temperature (°C)

8sqcm 2oz Cu One active die

Derating Curve

ZXTPS718MC

10sqcm 1oz Cu One active die

3.0

T

=25°C

amb

T

2.5

2.0

1.5

1.0

Dissipati on (W)

D

0.5

P

0.0

=125°C

j max

Continuous

2oz Cu One active die

0.1 1 10 100

2oz Cu Two active die

1oz Cu One active die

1oz Cu Two active die

Board Cu Area (sqcm)

Power Dissipation v Board A rea

225 200 175 150 125 100

75 50 25

Thermal Resistance (°C/W)

0

2oz Cu One active die

0.1 1 10 100

1oz Cu One active die

1oz Cu Two active die

2oz Cu Two active die

Board Cu Area (sqcm)

Thermal Resistance v Board Area

ZXTPS718MC

Document Number DS31937 Rev. 3 - 2

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ZXTPS718MC

PNP - Electrical Characteristics @T

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 16) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current

Static Forward Current Transfer Ratio (Note 16)

Collector-Emitter Saturation Voltage (Note 16)

Base-Emitter Turn-On Voltage (Note 16) Base-Emitter Saturation Voltage (Note 16) Output Capacitance

Transition Frequency Turn-on Time

= 25°C unless otherwise specified

A

BV BV BV

I

CBO

I

EBO

I

CES

CBO CEO EBO

-25 -35 - V

-20 -25 - V

-7 -8.5 - V

- - -100 nA

300 475 -

h

FE

300 450 150 230 -

15 30 -

- -19 -30

- -170 -220

V

CE(sat)

- -190 -250

- -240 -350

- -225 -300

V

BE(on

BE(sat

C

obo

f

T

t

on

t

off

- -0.87 -0.95 V

- -1.10 -1.12 V

- 21 30 pF

150 180 - MHz

- 40 - Ns

- 670 - Ns

IC = -100µA IC = -10mA I

= -100µA

E

V

= -20V

CB

V

= -6V

EB

V

= -16V

CES

I

= -10mA, V

C

I

= -100mA, VCE= -2V

C

-

mV

= -2A, VCE= -2V

I

C

= -6A, V

I

C

I

= -0.1A, IB= -10mA

C

= -1A, IB= -20mA

I

C

= -1.5A, IB= -50mA

I

C

= -2.5A, IB= -150mA

I

C

= -3.5A, IB= -350mA

I

C

IC = -3.5A, VCE= -2V IC = -3.5A, IB= -350mA V

= -10V. f = 1MHz

CB

= -10V, I

V

CE

f = 100MHz V

= -10V, I

CC

= I

I

B1

= -2V

CE

= -2V

CE

= -50mA,

C

= -1A

C

= -50mA Turn-off Time

B2

Schottky - Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

Reverse Breakdown Voltage

Forward Voltage (Note 16)

Reverse Current Diode Capacitance

Reverse Recovery Time

Notes: 16. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

BV

C

R

V

F

I

R

D

t

rr

40 60 - V

- 240 270

- 265 290

- 305 340

- 355 400

- 390 450

mV

- 425 500

- 495 600

- 420 -

- 50 100 µA

- 25 - pF

- 12 - Ns

IR = -300µA

= 50mA

I

F

= 100mA

I

F

= 250mA

I

F

= 500mA

I

F

= 750mA

I

F

= 1000mA

I

F

= 1500mA

I

F

= 1000mA, TA = 100°C

I

F

VR = 30V VR = 25V, f = 1MHz switched from I

= 500mA to I

F

Measured at I

= 500mA

R

= 50mA

R

ZXTPS718MC

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PNP - Typical Electrical Characteristics

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ZXTPS718MC

1

Tamb=25°C

100m

IC/IB=100

(V)

IC/IB=50

CE(SAT)

V

10m

IC/IB=10

1m 10m 100m 1 10

1.4

1.2

1.0

0.8

0.6

0.4

Normalised Gain

0.2

0.0

1m 10m 100m 1 10

IC Collector Current (A)

100°C

V

CE(SAT)

25°C

-55°C

v I

C

VCE=2V

IC Colle c to r C urrent (A)

630 540 450 360 270 180 90 0

0.25

IC/IB=50

0.20

CE(SAT)

100°C

25°C

v I

-55°C

C

0.15

(V)

0.10

CE(SAT)

V

0.05

0.00

1m 10m 100m 1 10

IC Collector Cu r rent (A)

V

IC/IB=50

1.0

)

FE

0.8

(V)

0.6

BE(SAT)

V

Typical Gain (h

0.4 1m 10m 100m 1 10

-55°C

25°C

100°C

IC Collector Cu r rent (A)

hFE v I

VCE=2V

1.0

0.8

(V)

0.6

BE(ON)

V

0.4

0.2

1m 10m 100m 1 10

ZXTPS718MC

Document Number DS31937 Rev. 3 - 2

-55°C

25°C

IC Collector Current (A)

V

BE(ON)

100°C

v I

C

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V

BE(SAT)

v I

C

April 2011

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Schottky - Typical Electrical Characteristics

1

100m

+125°C +85°C

10m

- Forward Current (A)

F

I

1m

0.00.20.40.6

VF - Forward Voltage (V)

IF v V

F

+25°C 0°C

-40°C

-55°C

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ZXTPS718MC

100m

10m

1m

100µ

10µ

1µ

100n

- Reverse Current (A)

R

I

10n

0 1020304050

VR - Reverse Voltage (V)

IR v V

R

+125°C

+85°C

+25°C 0°C

-40°C

-55°C

10

8

6

4

- Repetitive Peak I

2

Foward Current (A)

FRM

0

25 50 75 100 125

Repetitive Rating Rectangular Pul se Width=300μs

D=

0.02

0.05

0.1

0.2

0.5 1

TA - Ambient Temp (°C)

I

v T

FRM

A

125

Typical T

= 125°C

j

100

Rth(j-a)= 50°C/W 83°C/W

75

100°C/W 150°C/W 200°C/W

- Ambient Temp (°C)

A

T

300°C/W

50

0 5 10 15 20 25 30 35 40

VR - Continu ous Reverse Voltage (V)

TA v V

R

1.2

1.0

0.8

0.6

0.4

Repetitive Rating

FRM

Rectangular Pul se Widt h=300μs Tj = 125°C

0.2

0.0

- Average Forward Power (W)

0 2 4 6 8 10121416

FAV

I

P

- Repetitive Peak Foward Current (A)

FRM

P

v I

FAV

200 175 150 125 100

75 50 25

0

- Diode Capacitance (pF)

100m 1 10

D

C

VR - Reverse Voltage (V)

CD v V

R

D= 1

0.5

0.2

0.1

0.05

0.02

f = 1MHz

ZXTPS718MC

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Package Outline Dimensions

A

A1

D4

E

L

D2

b

Z

Suggested Pad Layout

G

C

G1

Y2

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ZXTPS718MC

A3

D

D4

E2

e

X

Y1

Y

X1

Dimensions Value (in mm)

C 0.650 G 0.285

G1 0.090

X 0.400

X1 1.120

Y 0.730 Y1 0.500 Y2 0.365

DFN3020B-8

Dim Min Max Typ

A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 - - 0.15

b 0.25 0.35 0.30

D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11

e - - 0.65

E 1.95 2.075 2.00 E2 0.43 0.63 0.53

L 0.25 0.35 0.30

Z - - 0.375

All Dimensions in mm

ZXTPS718MC

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporat ed does not assume an y liabi lity arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

C. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.

D. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause

the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorpor ated products in such safety-critical, life support devices or systems.

www.diodes.com

Diodes Incorporated

ZXTPS718MC

Document Number DS31937 Rev. 3 - 2

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