Diodes ZXTP749F User Manual

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Features

• BV

• BV

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• Low Saturation Voltage, V

• R

• 725mW power dissipation

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• Complementary NPN Type: ZXTN649F

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

> -25V

CEO

> -35V forward blocking voltage

CEO

= -3A Continuous Collector Current

C

= 87mΩ for a low equivalent on-resistance

CE(sat)

characterised up to -6A for high current gain hold-up

FE

SOT23

Top View Device Symbol

< -150mV @ -1A.

CE(SAT)

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ZXTP749F

25V PNP LOW SATURATION TRANSISTOR IN SOT23

Mechanical Data

• Case: SOT23

• Case Material: molded plastic, “Green” molding compound

• UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

• Weight 0.008 grams (approximate)

Application

• MOSFET gate drivers

• Power switching in automotive and industrial applications

• Motor drive and control

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C

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B

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Top View

Pin-Out

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTP749FTA 1N8 7 8 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

4. For packaging details, go to our website at http://www.diodes.com

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.

<1000ppm antimony compounds.

Marking Information

717

1N8

ZXTP749F

Document Number: DS31901 Rev. 3 - 2

1N8 = Product type Marking Code

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ZXTP749F

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

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Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current

V

CBO

V

CEO

V

EBO

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C

I

CM

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B

-35 V

-25 V

-7 V

-3 A

-6 A

-500 mA

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

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Characteristic Symbol Value Unit

Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range

Notes: 5. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

6. Thermal resistance from junction to solder-point (at the end of the collector lead).

P
R
R

T

J, TSTG

θJA

θJL

D

725 mW
172

79

-55 to +150

°C/W
°C/W

°C

ZXTP749F

Document Number: DS31901 Rev. 3 - 2

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Thermal Characteristics and Derating information

V

CE(sat)

10

Limited

1

DC

1s

100m

Single Pulse

T

Collector Current (A)

C

10m

-I

100m 1 10

amb

=25°C

-VCE Collector-Emitter Voltage (V)

100ms

10ms

1ms

100µs

Max Power Dissipation (W)

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ZXTP749F

0.8

0.6

0.4

0.2

0.0
0 20 40 60 80 100 120 140 160

Temperature (°C)

Safe Operating Area

Derating Curve

180

160

140

amb

100

Single Pulse

T

=25°C

amb

T

=25°C

120

100

D=0.5

80

10

60

D=0.2

40

20

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Pulse Width (s)

Transient Thermal Impedance

D=0.05

D=0.1

Single Pulse

1

Maximum Power (W)

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Pulse Power Dissipation

ZXTP749F

Document Number: DS31901 Rev. 3 - 2

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January 2013

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