Diodes ZXTP5401Z User Manual

ZXTP5401Z

C

E

B

C

E

Pinout - top view

C

B

150V, SOT89, PNP High voltage transistor

Summary

BV

I

P

Complementary part number ZXTN5551Z

CEO

EBO

C(cont)

= 1.2W

D

> -150V

> -5V

= -600mA

Description

A high voltage PNP transistor in a small outline surface mount package.

Features

•150V rating

• SOT89 package

Applications

• High voltage amplification

Ordering information

Device Reel size

(inches)

ZXTP5401ZTA 7 12 1000

Tape width

(mm)

Quantity

per reel

Device marking

P01

Issue 1 - August 2007 1 www.zetex.com

ZXTP5401Z

Absolute maximum ratings

Parameter Symbol Limit Unit

Collector-base voltage V

Collector-emitter voltage V

Emitter-base voltage V

Continuous collector current

(a)

Pulsed collector current I

Power dissipation at T

= 25°C

A

(a)

CBO

CEO

EBO

I

C

CM

P

D

Linear derating factor 9.6 mW/°C

Operating and storage temperature range T

j

, T

stg

Thermal resistance

Parameter Symbol Limit Unit

Junction to ambient

(a)

R

⍜JA

-160 V

-150 V

-5 V

-600 mA

-2 A

1.2 W

-55 to 150 °C

°C/W

NOTES:

(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz weight

copper, in still air conditions.

Issue 1 - August 2007 2 www.zetex.com

Typical characteristics

ZXTP5401Z

Issue 1 - August 2007 3 www.zetex.com