Diodes ZXTP5401G User Manual

ZXTP5401G

C

E

B

150V, SOT223, PNP High voltage transistor

Summary

BV

BV

I

P

Complementary part number ZXTN5551G

CEO

EBO

C(cont)

= 2W

D

> -150V

> -5V

= -600mA

Description

A high voltage PNP transistor in a surface mount package

Features

•150V rating

• SOT223 package

Applications

• High voltage amplification

Ordering information

E

C

C

Device Reel size

(inches)

ZXTP5401GTA 7 12 1000

ZXTP5401GTC 13 12 4000

Tape width

(mm)

Quantity per

reel

Pinout - top view

Device marking

ZXTP
5401

Issue 1 - August 2007 1 www.zetex.com

© Zetex Semiconductors plc 2007

B

ZXTP5401G

Absolute maximum ratings

Parameter Symbol Limit Unit

Collector-base voltage V

Collector-emitter voltage V

Emitter-base voltage V

Continuous collector current

(a)

Peak collector current I

Power dissipation at T

=25°C

A

(a)

CBO

CEO

EBO

I

C

C

P

D

Linear derating factor 16 mW/°C

Operating and storage temperature range T

j

, T

stg

Thermal resistance

Parameter Symbol Limit Unit

Junction to ambient

(a)

R

⍜JA

-160 V

-150 V

-5 V

-600 mA

-2 A

2W

-55 to 150 °C

62.5 °C/W

NOTES:

(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz weight

copper, in still air conditions.

Issue 1 - August 2007 2 www.zetex.com

© Zetex Semiconductors plc 2007

Typical characteristics

ZXTP5401G

Issue 1 - August 2007 3 www.zetex.com

© Zetex Semiconductors plc 2007