Diodes ZXTP25040DFL User Manual

ZXTP25040DFL 40V, SOT23, PNP low power transistor

Summary

BV

I

V

R

P

Complementary part number ZXTN25040DFL

> -40V

CEO

> -3V

ECO

= -1.5A

C(cont)

CE(sat)

= 350mW

D

< -115mV @ 1A

= 82m⍀

Description

Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.

Features

• High peak current

• Low saturation voltage

• 40V forward blocking voltage

Applications

• MOSFET and IGBT gate driving

C

B

E

• Low power DC-DC conversion

C

Ordering information

B

Device Reel size

(inches)

ZXTP25040DFLTA 7 8 3,000

Tape width

(mm)

Quantity per reel

Pinout - top view

Device marking

1A2

Issue 3 - January 2007 1 www.zetex.com

ZXTP25040DFL

Absolute maximum ratings

Parameter Symbol Limit Unit

Collector-base voltage V

Collector-emitter voltage (forward blocking) V

Emitter-collector voltage (reverse blocking) V

Emitter-base voltage V

Continuous collector current

(a)

Base current I

Peak pulse current I

Power dissipation at T

amb

=25°C

(a)

CBO

CEO

ECO

EBO

I

C

B

CM

P

D

-45 V

-40 V

-3 V

-7 V

-1.5 A

-0.5 A

-5 A

350 mW

Linear derating factor 2.8 mW/°C

Operating and storage temperature range T

j

, T

stg

-55 to 150 °C

Thermal resistance

Parameter Symbol Limit Unit

Junction to ambient

(a)

R

⍜JA

357 °C/W

NOTES:

(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in

still air conditions.

Issue 3 - January 2007 2 www.zetex.com

Characteristics

ZXTP25040DFL

Issue 3 - January 2007 3 www.zetex.com