Diodes ZXTP25020DFL User Manual

ZXTP25020DFL 20V, SOT23, PNP low power transistor

Summary

BV

I

V

R

P

Complementary part number ZXTN25020DFL

> -20V

CEO

> -4V

ECO

= 1.5A

C(cont)

CE(sat)

= 350mW

D

< 85 mV @ 1A

= 54m⍀

Description

Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.

Features

• High peak current

• Low saturation voltage

Applications

• DC-DC converters

C

B

E

• MOSFET and IGBT gate driving

Ordering information

Device Reel size

(inches)

ZXTP25020DFLTA 7 8 3000

Tape width

(mm)

Quantity per reel

C

B

Pinout - top view

Device marking

1F2

Issue 1 - January 2007 1 www.zetex.com

ZXTP25020DFL

Absolute maximum ratings

Parameter Symbol Limit Unit

Collector-base voltage V

Collector-emitter voltage (forward blocking) V

Emitter-collector voltage (reverse blocking) V

Emitter-base voltage V

Continuous collector current I

Base current I

Peak pulse current I

Power dissipation at T

amb

=25°C

(a)

CBO

CEO

ECO

EBO

C

B

CM

P

D

-25 V

-20 V

-4 V

-7 V

-1.5 A

-500 mA

-6 A

350 mW

Linear derating factor 2.8 mW/°C

Operating and storage temperature range T

j

, T

-55 to 150 °C

stg

Thermal resistance

Parameter Symbol Limit Unit

Junction to ambient

NOTES:

(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in

still air conditions.

(a)

R

⍜JA

357 °C/W

Issue 1 - January 2007 2 www.zetex.com

Characteristics

ZXTP25020DFL

Issue 1 - January 2007 3 www.zetex.com