Diodes ZXTP25012EFH User Manual
ZXTP25012EFH
C
E
B
12V, SOT23, PNP medium power transistor
Summary
BV
h
I
R
V
P
Complementary part number ZXTN25012EFH
CEO
> 500
FE
C(cont)
CE(sat)
CE(sat)
= 1.25W
D
> -12V
= 4A
= 40m⍀
< -65mV @ 1A
Description
Advanced process capability and package design have been used to
maximise the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
• High power dissipation SOT23 package
• High peak current
• Very high gain, 500 minimum
• Low saturation voltage
E
Applications
• MOSFET and IGBT gate driving
•DC - DC converters
• Motor drive
• High side driver
• Line disconnect switch
C
Pinout - top view
Ordering information
Device Reel size
(inches)
ZXTP25012EFHTA 7 8 3000
Tape width
(mm)
Quantity
per reel
Device marking
1E8
Issue 2 - October 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
B
ZXTP25012EFH
Absolute maximum ratings
Parameter Symbol Limit Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Continuous collector current
(b)
Base current I
Peak pulse current I
Power dissipation at T
amb
=25°C
(a)
CBO
CEO
EBO
I
C
B
CM
P
D
-12 V
-12 V
-7 V
-4 A
-1 A
-10 A
0.73 W
Linear derating factor 5.84 mW/°C
Power dissipation at T
amb
=25°C
(b)
P
D
1.05 W
Linear derating factor 8.4 mW/°C
Power dissipation at T
amb
=25°C
(c)
P
D
1.25 W
Linear derating factor 9.6 mW/°C
Power dissipation at T
amb
=25°C
(d)
P
D
1.81 W
Linear derating factor 14.5 mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to 150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
Junction to ambient
Junction to ambient
Junction to ambient
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs
(a)
(b)
(c)
(d)
R
R
R
R
⍜JA
⍜JA
⍜JA
⍜JA
171 °C/W
119 °C/W
100 °C/W
69 °C/W
Issue 2 - October 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Characteristics
ZXTP25012EFH
Issue 2 - October 2007 3 www.zetex.com
© Zetex Semiconductors plc 2007
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