Product Line o
40V PNP MEDIUM POWER TRANSISTOR IN SOT23
Features
Mechanical Data
Diodes Incorporated
ZXTP2041F
BV
I
I
Low Saturation Voltage V
R
Complementary NPN type: ZXTN2040F
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
> -40V
CEO
= -1A High Continuous Current
C
= -2A Peak Pulse Current
CM
< -500mV @ -1A
CE(sat)
= 350mΩ for a Low Equivalent On-resistance
SAT
SOT23
Top View
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Application
Power MOSFET gate driving
Low loss power switching
C
B
E
Device symbol Top View
C
Pin-Out
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXTP2041FTA P41 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
P41
P41 = Product Type Marking Code
ZXTP2041F
Da
tasheet Number: DS33721 Rev. 7 - 2
1 of 7
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December 2013
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Product Line o
Diodes Incorporated
ZXTP2041F
Absolute Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Peak Base Current
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation
Thermal Resistance, Junction to Ambient
(Note 5)
(Note 6) 350
(Note 5)
(Note 6) 357
Thermal Resistance, Junction to Leads (Note 7)
Operating and Storage Temperature Range
ESD Ratings (Note 8)
V
V
V
I
I
R
R
T
J,TSTG
CBO
CEO
EBO
I
C
CM
I
B
BM
P
D
θJA
θJL
-40 V
-40 V
-7 V
-1 A
-2 A
-200 mA
-1 A
310
403
350
-55 to +150
mW
C/W
C/W
C
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on 15 mm x 15mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the leads).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTP2041F
Da
tasheet Number: DS33721 Rev. 7 - 2
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December 2013
© Diodes Incorporated
Thermal Characteristics and Derating Information
Product Line o
Diodes Incorporated
ZXTP2041F
0.4
0.3
0.2
0.1
0.0
0 25 50 75 100 125 150
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
10
Single Pulse. T
1
amb
=25°C
400
350
300
250
D=0.5
200
150
D=0.2
100
50
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
D=0.1
Single Pulse
D=0.05
Pulse Width (s)
Transient Thermal Impedance
0.1
10m 100m 1 10 100 1k
Max Power Dissipation (W)
Pulse Width (s)
Pulse Power Dissipation
ZXTP2041F
Da
tasheet Number: DS33721 Rev. 7 - 2
www.diodes.com
3 of 7
December 2013
© Diodes Incorporated