Diodes ZXTP2039F User Manual
ZXTP2039F
SOT23 80 volt PNP silicon planar medium power
transistor
Summary
V
(BR)CEV
V
(BR)CEO
I
c(cont)
V
ce(sat)
> -80V
> -60V
= -1A
< -600mV @ -1A
Complementary type
ZXTN2038F
Description
This transistor combines high gain, high current operation and low saturation voltage making it
ideal for power MOSFET gate driving and low loss power switching.
Features
■ Low saturation voltage for reduced power dissipation
■ 1 to 2 amp high current capability
■ Pb-free
■ SOT23 package
Applications
■ Power MOSFET gate driving
■ Low loss power switching
Ordering information
Pin out - top view
Device Reel size Tape width Quantity per reel
ZXTP2039FTA 7” 8mm 3,000
ZXTP2039FTC 13” 8mm 10,000
Device marking
P39
Issue 3 - August 2005 1 www.zetex.com
© Zetex Semiconductors plc 2005
ZXTP2039F
Absolute maximum ratings
Parameter Symbol Limit Unit
Collector-base voltage V
Collector-emitter voltage V
Collector-emitter voltage V
Emitter-base voltage V
Peak pulse current I
Continuous collector current
*
Peak base current I
Power dissipation @ T
A
=25°C
*
Operating and storage temperature T
NOTES:
* For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
CBO
CEV
CEO
EBO
CM
I
C
BM
P
D
j:Tstg
-80 V
-80 V
-60 V
-5.0 V
-2 A
-1 A
-1 A
350 mW
-55 to +150 °C
Issue 3 - August 2005 2 www.zetex.com
© Zetex Semiconductors plc 2005
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