Diodes ZXTP2025F User Manual
ZXTP2025F
50V, SOT23, PNP medium power transistor
Summary
V
(BR)CEO
I
C(cont)
R
CE(sat)
V
CE(sat)
P
D
Complementary part number: ZXTN2031F
> -50V
= -5A
= 30m⍀ typical
< - 60mV @ -1A
= 1.2W
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally suited
to applications where space is at a premium.
Features
• Higher power dissipation SOT23 package
• High peak current
• Low saturation voltage
•High gain
• 50V forward blocking voltage
Applications
• MOSFET and IGBT gate driving
• Motor drive
• Relay, lamp and solenoid drive
• High side switches
• DC-DC converters
Pinout - top view
Ordering information
Device Reel size
(inches)
ZXTP2025FTA 7 8 3,000
Tape width
(mm)
Quantity per reel
Device marking
312
Issue 3 - January 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
ZXTP2025F
Absolute maximum ratings
Parameter Symbol Limit Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Peak pulse current I
Continuous collector current
(c)
Base current I
Power dissipation @ T
=25°C
A
(a)
Linear derating factor
Power dissipation @ T
=25°C
A
(b)
Linear derating factor
Power dissipation @ T
=25°C
A
(c)
Linear derating factor
Operating and storage temperature T
I
P
P
P
CM
C
B
CBO
CEO
EBO
D
D
D
j:Tstg
-50 V
-50 V
-7.0 V
-10 A
-5 A
-1.2 A
1.0
8.0
mW/°C
1.2
9.6
mW/°C
1.56
12.5
mW/°C
-55 to +150 °C
W
W
W
Thermal resistance
Parameter Symbol Value Unit
Junction to ambient
Junction to ambient
Junction to ambient
NOTES:
(a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(c) As (b) above measured at t<5secs.
(a)
(b)
(c)
Rθ
Rθ
Rθ
JA
JA
JA
125 °C/W
104 °C/W
80 °C/W
Issue 3 - January 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
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