Diodes ZXTP2013Z User Manual
ZXTP2013Z
100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY
= -100V : R
BV
CEO
DESCRIPTION
Packaged in the SOT89 outline this new low saturation 100V PNP transistor
offers low on state losses making it ideal for use in DC-DC circuits, line
switching and various driving and power management functions.
FEATURES
3.5 amps continuous current
•
Up to 10 amps peak current
•
Very low saturation voltages
•
APPLICATIONS
Motor driving
•
•
Line switching
= 57m ; IC= -3.5A
SAT
9
8
T
O
S
•
High side switches
•
Subscriber line interface cards (SLIC)
ORDERING INFORMATION
DEVICE REEL
ZXTP2013ZTA
TAPE WIDTH
SIZE
7" 12mm
embossed
DEVICE MARKING
953
ISSUE 1 - JUNE 2005
QUANTITY PER
REEL
1,000 units
1
PINOUT
VIEW
ZXTP2013Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BV
Collector-emitter voltage BV
Emitter-base voltage BV
Continuous collector current
(a)
Peak pulse current I
(a)
Power dissipation at T
=25°C
A
CBO
CEO
EBO
I
C
CM
P
D
Linear derating factor
Power dissipation at TA=25°C
(b)
P
D
Linear derating factor
Operating and storage temperature range T
j,Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Junction to ambient
Junction to ambient
(a)
(b)
R
JA
R
JA
-140 V
-100 V
-7 V
-3.5 A
-10 A
1.5
12
mW/°C
2.1
16.8
mW/°C
-55 to 150 °C
83 °C/W
60 °C/W
W
W
NOTES:
(a)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b)For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 1 - JUNE 2005
2
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