Diodes ZXTP2012G User Manual
ZXTP2012G
60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY
= -60V : R
BV
CEO
DESCRIPTION
Packaged in the SOT223 outline this new low saturation 60V PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
Extremely low equivalent on-resistance; R
•
5.5 amps continuous current
•
Up to 15 amps peak current
•
Very low saturation voltages
•
Excellent gain characteristics specified up to 10 Amps
•
= 39m ; IC= -5.5A
SAT
= 39mV at 5A
SAT
3
2
2
T
O
S
APPLICATIONS
•
DC - DC converters
•
MOSFET gate drivers
•
Charging circuits
•
Power switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXTP2012GTA 7” 12mm
ZXTP2012GTC 13” 4,000 units
TAPE
WIDTH
embossed
QUANTITY PER
REEL
1,000 units
DEVICE MARKING
ZXTP
2012
ISSUE 1 - JUNE 2005
PINOUT
TOP VIEW
1
SEMICONDUCTORS
ZXTP2012G
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BV
Collector-emitter voltage BV
Emitter-base voltage BV
Continuous collector current I
Peak pulse current I
(a)
Power dissipation at T
=25°C
A
CBO
CEO
EBO
C
CM
P
D
Linear derating factor
Power dissipation at T
=25°C
A
(b)
P
D
Linear derating factor
Operating and storage temperature range T
j,Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(a)
R
⍜JA
-100 V
-60 V
-7 V
-5.5 A
-15 A
3.0
24
mW/°C
1.6
12.8
mW/°C
-55 to +150 °C
42 °C/W
W
W
SEMICONDUCTORS
ISSUE 1 - JUNE 2005
2
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