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ZXTP2012A
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE
SUMMARY
= -60V : R
BV
CEO
DESCRIPTION
Packaged in the E-line outline this new low saturation 60V PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
3.5 amps continuous current
•
Up to 15 amps peak current
•
Very low saturation voltages
•
Excellent gain up to 10 amps
•
APPLICATIONS
•
DC - DC converters
= 38m ; IC= -3.5A
SAT
-
l
e
E
i
n
•
MOSFET gate drivers
•
Power switches
•
Motor control
ORDERING INFORMATION
DEVICE QUANTITY PER REEL
ZXTP2012ASTOA
ZXTP2012ASTZ
2,000 units / reel
2,000 units / carton
DEVICE MARKING
ZXT
P20
12
ISSUE 2 - NOVEMBER 2005
PINOUT
TOP VIEW
1
SEMICONDUCTORS
Page 2
ZXTP2012A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BV
Collector-emitter voltage BV
Emitter-base voltage BV
Continuous collector current
(a)
Peak pulse current I
(a)
Practical power dissipation at T
=25°C
A
CBO
CEO
EBO
I
C
CM
P
D
Linear derating factor
Power dissipation at T
=25°C
A
(b)
P
D
Linear derating factor
Operating and storage temperature range T
j,Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
Junction to ambient
NOTES
(a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
Collector lead length to solder point 4mm.
(b) For a device mounted in a socket in still air conditions. Collector lead length 10mm.
(a)
(b)
R
R
⍜JA
⍜JA
-100 V
-60 V
-7 V
-3.5 A
-15 A
1.0
8
mW/°C
0.71
5.7
mW/°C
-55 to 150 °C
125 °C/W
175 °C/W
W
W
SEMICONDUCTORS
ISSUE 2 - NOVEMBER 2005
2
Page 3
CHARACTERISTICS
ZXTP2012A
ISSUE 2 - NOVEMBER 2005
3
SEMICONDUCTORS
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ZXTP2012A
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BV
Collector-emitter breakdown voltage BV
Collector-emitter breakdown voltage BV
Emitter-base breakdown voltage BV
Collector cut-off current I
Collector cut-off current I
Rⱕ1k⍀
Emitter cut-off current I
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Base-emitter turn-on voltage V
Static forward current transfer ratio h
Transition frequency f
CBO
CER
CEO
EBO
CBO
CER
EBO
CE(SAT)
BE(SAT)
BE(ON)
FE
T
-100 -120 V IC=-100A
-100 -120 V IC=-1A, RBⱕ1k⍀
-60 -80 V IC=-10mA*
-7 -8.1 V IE=-100A
⬍1-20
-0.5nAA
⬍1-20
-0.5nAA
VCB=-80V
=-80V, T
V
CB
V
=-80V
CB
=-80V, T
V
CB
⬍1-10nAVEB=-6V
-14
-20
mV
IC=-0.1A, IB=-10mA*
-50
-80
-145
-65
-115
-210
mV
mV
mV
I
C
I
C
I
C
=-1A, IB=-100mA*
=-2A, IB=-200mA*
=-4A, IB=-400mA*
-960 -1060 mV IC=-4A, IB=-400mA*
-850 -960 mV IC=-4A, VCE=-1V*
100
100
65
10
250
200
120
25
300
IC=-10mA, VCE=-1V*
=-1A, VCE=-1V*
I
C
=-4A, VCE=-1V*
I
C
=-10A, VCE=-1V*
I
C
120 MHz IC=-100mA, VCE=-10V
f=50MHz
Output capacitance C
Switching times t
t
OBO
ON
OFF
48 pF VCB=-10V, f=1MHz*
39
370
ns IC=-1A, VCC=-10V,
=-100mA
I
B1=IB2
amb
amb
=100⬚C
=100⬚C
* Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%.
SEMICONDUCTORS
4
ISSUE 2 - NOVEMBER 2005
Page 5
TYPICAL CHARACTERISTICS
ZXTP2012A
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SEMICONDUCTORS
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ZXTP2012A
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
DIM
Millimeters Inches
Min Max Min Max
A 0.41 0.495 0.016 0.0195
B 0.41 0.495 0.016 0.0195
C 3.61 4.01 0.142 0.158
D 4.37 4.77 0.172 0.188
E 2.16 2.41 0.085 0.095
F
2.50 — 0.098
—
G 1.27 NOM 0.050 NOM
L 13.00 13.97 0.512 0.550
© Zetex Semiconductors plc 2005
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
[email protected]
These offices are supported by agents and distributors in major countries world-wide.
This publicationis issued toprovide outline informationonly which (unless agreed by the Company inwriting) may notbe used, appliedor reproduced
for any purposeor form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
[email protected]
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
[email protected]
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
[email protected]
ISSUE 2 - NOVEMBER 2005
SEMICONDUCTORS
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