Diodes ZXTP2012A User Manual
ZXTP2012A
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE
SUMMARY
= -60V : R
BV
CEO
DESCRIPTION
Packaged in the E-line outline this new low saturation 60V PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
3.5 amps continuous current
•
Up to 15 amps peak current
•
Very low saturation voltages
•
Excellent gain up to 10 amps
•
APPLICATIONS
•
DC - DC converters
= 38m ; IC= -3.5A
SAT
-
l
e
E
i
n
•
MOSFET gate drivers
•
Power switches
•
Motor control
ORDERING INFORMATION
DEVICE QUANTITY PER REEL
ZXTP2012ASTOA
ZXTP2012ASTZ
2,000 units / reel
2,000 units / carton
DEVICE MARKING
ZXT
P20
12
ISSUE 2 - NOVEMBER 2005
PINOUT
TOP VIEW
1
SEMICONDUCTORS
ZXTP2012A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BV
Collector-emitter voltage BV
Emitter-base voltage BV
Continuous collector current
(a)
Peak pulse current I
(a)
Practical power dissipation at T
=25°C
A
CBO
CEO
EBO
I
C
CM
P
D
Linear derating factor
Power dissipation at T
=25°C
A
(b)
P
D
Linear derating factor
Operating and storage temperature range T
j,Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
Junction to ambient
NOTES
(a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
Collector lead length to solder point 4mm.
(b) For a device mounted in a socket in still air conditions. Collector lead length 10mm.
(a)
(b)
R
R
⍜JA
⍜JA
-100 V
-60 V
-7 V
-3.5 A
-15 A
1.0
8
mW/°C
0.71
5.7
mW/°C
-55 to 150 °C
125 °C/W
175 °C/W
W
W
SEMICONDUCTORS
ISSUE 2 - NOVEMBER 2005
2
Loading...