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ZXTP2009Z
40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR
IN SOT89
SUMMARY
= -40V : R
BV
CEO
DESCRIPTION
Packaged in the SOT89 outline this new low saturation 40V PNP transistor
offers low on state losses making it ideal for use in DC-DC circuits, line
switching and various driving and power management functions.
FEATURES
Extremely low equivalent on-resistance
•
5.5 amps continuous current
•
Up to 15 amps peak current
•
Very low saturation voltages < -60mV @ -1A
•
APPLICATIONS
•
DC - DC converters
= 29m ; IC= -5.5A
SAT
9
8
T
O
S
•
MOSFET gate drivers
•
Charging circuits
•
Power switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXTP2009ZTA 7” 12mm 1,000 units
TAPE
WIDTH
QUANTITY PER
REEL
DEVICE MARKING
53Z
ISSUE 1 - JUNE 2005
PINOUT
TOP VIEW
1
SEMICONDUCTORS
Page 2
ZXTP2009Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BV
Collector-base voltage BV
Collector-emitter voltage BV
Emitter-base voltage BV
Continuous collector current
(b)
Peak pulse current I
(a)
Power dissipation at T
=25°C
A
CBO
CBS
CEO
EBO
I
C
CM
P
D
Linear derating factor
Power dissipation at T
=25°C
A
(b)
P
D
Linear derating factor
Power dissipation at T
=25°C
A
(c)
P
D
Linear derating factor
Power dissipation at T
=25°C
A
(d)
P
D
Linear derating factor
Operating and storage temperature range T
j,Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
Junction to ambient
Junction to ambient
Junction to ambient
(a)
(b)
(c)
(d)
R
R
R
R
⍜JA
⍜JA
⍜JA
⍜JA
-50 V
-50 V
-40 V
-7.5 V
-5.5 A
-15 A
0.9
7.2
mW/°C
1.5
12
mW/°C
2.1
16.8
mW/°C
3
24
mW/°C
-55 to 150 °C
139 °C/W
83 °C/W
60 °C/W
42 °C/W
W
W
W
W
NOTES
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB measured at t⬍ 5 secs.
ISSUE 1 - JUNE 2005
SEMICONDUCTORS
2
Page 3
CHARACTERISTICS
ZXTP2009Z
ISSUE 1 - JUNE 2005
3
SEMICONDUCTORS
Page 4
ZXTP2009Z
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BV
Collector-emitter breakdown voltage BV
Collector-emitter breakdown voltage BV
Emitter-base breakdown voltage BV
Collector cut-off current I
Collector cut-off current I
Emitter cut-off current I
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Base-emitter turn-on voltage V
Static forward current transfer ratio H
Transition frequency f
CBO
CES
CEO
EBO
CBO
CES
EBO
CE(SAT)
BE(SAT)
BE(ON)
FE
T
-50 -90 V IC=-100A
-50 -90 V IC=-100A
-40 -58 V IC=-10mA*
-7.5 -8.3 V IE=-100A
⬍1 -20 nA VCB=-40V
⬍1 -20 nA VCB=-32V
⬍1 -20 nA VEB=-6V
-15
-30
mV
IC=-0.1A, IB=-10mA*
=-1A, IB=-100mA*
mV
I
C
=-1A, IB=-50mA*
I
mV
C
=-1A, IB=-10mA*
I
mV
C
I
=-2A, IB=-200mA*
mV
C
=-2A, IB=-40mA*
I
mV
C
I
=-3.5A, IB=-175mA*
mV
C
=-5.5A, IB=-550mA*
I
mV
C
IC=-2A, IB=-40mA*
=-5.5A, IB=-550mA*
I
C
IC=-2A, VCE=-2V*
=-5.5A, VCE=-2V*
I
C
IC=-10mA, VCE=-2V*
=-0.5A, VCE=-2V*
I
C
I
=-2A, VCE=-2V*
C
=-5.5A, VCE=-2V*
I
C
200
200
170
110
-44
-50
-120
-70
-125
-130
-162
-820
-1000
-778
-869
390
350
290
175
-60
-70
-165
-80
-175
-175
-185
-900
-1075mVmV
-850
-950mVmV
550
152 MHz IC=-50mA, VCE=-10V
f=100MHz
Output capacitance C
Switching times t
Switching times t
t
t
t
t
t
t
OBO
d
r
s
r
d
r
s
r
53 pF VCB=-10V, f=1MHz*
18
17
ns IC=-1A, VCC=-10V,
=-100mA
I
B1=IB2
325
60
55
107
ns IC=-2A, VCC=-30V,
=-20mA
I
B1=IB2
264
103
* Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ2%.
SEMICONDUCTORS
ISSUE 1 - JUNE 2005
4
Page 5
TYPICAL CHARACTERISTICS
ZXTP2009Z
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SEMICONDUCTORS
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ZXTP2009Z
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
DIM
Millimeters Inches
Min Max Min Max Min Max Min Max
DIM
A 1.40 1.60 0.550 0.630 e 1.40 1.50 0.055 0.059
b 0.38 0.48 0.015 0.019 E 3.75 4.25 0.150 0.167
b1 - 0.53 - 0.021 E1 - 2.60 - 0.102
b2 1.50 1.80 0.060 0.071 G 2.90 3.00 0.114 0.118
c 0.28 0.44 0.011 0.017 H 2.60 2.85 0.102 0.112
D 4.40 4.60 0.173 0.181 - ----
Millimeters Inches
© Zetex Semiconductors plc 2005
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
Thispublicationisissuedto provide outlineinformationonlywhich(unlessagreed by theCompanyinwriting)maynot be used,appliedorreproduced
for any purpose or form part of any order or contract or beregarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
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Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
ISSUE 1 - JUNE 2005
SEMICONDUCTORS
6
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