Diodes ZXTP2006E6 User Manual
ZXTP2006E6
20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6
SUMMARY
CEO
= -20V : R
BV
DESCRIPTION
Packaged in the SOT23-6 outline this new low
saturation 20V PNP transistor offers extremely low on
state losses making it ideal for use in DC-DC circuits
andvariousdrivingandpowermanagementfunctions.
= 31m ; IC= -3.5A
SAT
FEATURES
3.5 Amps continuous current
•
Extremely low saturation voltage (-70mV max @ 1A/100mA )
•
Up to 10 Amps peak current
•
Very low saturation voltages
•
APPLICATIONS
•
DC - DC converters
•
Battery charging
•
Power switches
•
Motor control
•
Power management functions
ORDERING INFORMATION
DEVICE REEL
ZXTP2006E6TA
ZXTP2006E6TC 13” 8mm embossed 10,000
SIZE
7” 8mm embossed 3,000
TAPE WIDTH
QUANTITY PER REEL
3
2
T
O
S
PINOUT
-
6
DEVICE MARKING
52
ISSUE 1 - JUNE 2005
TOP VIEW
1
ZXTP2006E6
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BV
Collector-emitter voltage BV
Emitter-base voltage BV
Continuous collector current I
Peak pulse current I
(a)
Power dissipation at T
=25°C
A
C
CM
P
Linear derating factor
Power dissipation at T
=25°C
A
(b)
P
Linear derating factor
CBO
CEO
EBO
D
D
-25
-20 V
-7.5 V
-3.5 A
-10 A
1.1
8.8
1.7
13.6
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
Junction to ambient
NOTES
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) As above measured at t<5 seconds.
(a)
(b)
R
R
⍜JA
⍜JC
113 °C/W
73 °C/W
V
W
mW/°C
W
mW/°C
ISSUE 1 - JUNE 2005
2
CHARACTERISTICS
ZXTP2006E6
ISSUE 1 - JUNE 2005
3
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