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ZXTP2006E6
20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6
SUMMARY
CEO
= -20V : R
BV
DESCRIPTION
Packaged in the SOT23-6 outline this new low
saturation 20V PNP transistor offers extremely low on
state losses making it ideal for use in DC-DC circuits
andvariousdrivingandpowermanagementfunctions.
= 31m ; IC= -3.5A
SAT
FEATURES
3.5 Amps continuous current
•
Extremely low saturation voltage (-70mV max @ 1A/100mA )
•
Up to 10 Amps peak current
•
Very low saturation voltages
•
APPLICATIONS
•
DC - DC converters
•
Battery charging
•
Power switches
•
Motor control
•
Power management functions
ORDERING INFORMATION
DEVICE REEL
ZXTP2006E6TA
ZXTP2006E6TC 13” 8mm embossed 10,000
SIZE
7” 8mm embossed 3,000
TAPE WIDTH
QUANTITY PER REEL
3
2
T
O
S
PINOUT
-
6
DEVICE MARKING
52
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TOP VIEW
1
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ZXTP2006E6
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BV
Collector-emitter voltage BV
Emitter-base voltage BV
Continuous collector current I
Peak pulse current I
(a)
Power dissipation at T
=25°C
A
C
CM
P
Linear derating factor
Power dissipation at T
=25°C
A
(b)
P
Linear derating factor
CBO
CEO
EBO
D
D
-25
-20 V
-7.5 V
-3.5 A
-10 A
1.1
8.8
1.7
13.6
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
Junction to ambient
NOTES
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) As above measured at t<5 seconds.
(a)
(b)
R
R
⍜JA
⍜JC
113 °C/W
73 °C/W
V
W
mW/°C
W
mW/°C
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CHARACTERISTICS
ZXTP2006E6
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ZXTP2006E6
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BV
Collector-emitter breakdown voltage BV
Emitter-base breakdown voltage BV
Collector cut-off current I
Collector cut-off current I
Emitter cut-off current I
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Base-emitter turn-on voltage V
Static forward current transfer ratio h
Transition frequency f
CBO
CEO
EBO
CBO
CES
EBO
CE(SAT)
BE(SAT)
BE(ON)
FE
T
-25 -49 V IC= -100A
-20 -43 V IC= -10mA *
-7.5 -8.4 V IE= -100A
-100 nA VCB= -20V
-100 nA VCB= -20V
-100 nA VEB= -6V
-10
-15
mV
IC= -0.1A, IB= -10mA*
= -1A, IB= -10mA*
-100
-110
-140
-130
mV
mV
I
C
= -3.5A, IB= -350mA*
I
C
-0.96 -1.1 V IC= -3.5A, IB= -350mA*
-0.8 -0.9 V IC= -3.5A, VCE= -2V *
300
300
150
10
575
450
285
40
900
IC= -10mA, VCE= -2V *
= -1A, VCE= -2V *
I
C
= -3.5A, VCE= -2V *
I
C
= -10A, VCE= -2V *
I
C
110 IC= -50mA, VCE= -10V
f = 50MHz
Output capacitance C
OBO
45 pF VCB= -10V, f = 1MHz *
NOTES
* Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ2%.
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TYPICAL CHARACTERISTICS
ZXTP2006E6
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ZXTP2006E6
NOTES:
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NOTES:
ZXTP2006E6
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ZXTP2006E6
PACKAGE OUTLINE PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
DIM
Millimeters Inches
Min Max Min Max Min Max Min Max
DIM
A 0.90 1.45 0.035 0.057 E 2.20 3.20 0.0866 0.118
A1 0.00 0.15 0.00 0.006 E1 1.30 1.80 0.0511 0.071
A2 0.90 1.30 0.035 0.051 L 0.10 0.60 0.004 0.024
b 0.20 0.50 0.008 0.020 e 0.95 REF 0.037 REF
C 0.09 0.26 0.003 0.010 e1 1.90 REF 0.075 REF
D 2.70 3.10 0.106 0.122 ⍜ 0° 30° 0° 30°
Millimeters Inches
© Zetex Semiconductors plc 2005
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Zetex GmbH
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Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
Thispublicationisissued to provide outlineinformationonlywhich (unless agreedbytheCompanyin writing) maynotbeused,applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
Americas
Zetex Inc
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Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
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Zetex (Asia) Ltd
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Hing Fong Road, Kwai Fong
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Telephone: (852) 26100 611
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Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
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hq@zetex.com
ISSUE 1 - JUNE 2005
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