Diodes ZXTP19100CG User Manual

ZXTP19100CG

C

E

B

C

E

C

B

Pinout - top view

100V PNP medium transistor in SOT223

Summary

BV

BV

I

V

R

PD = 3.0W

Complementary part number ZXTN19100CG

CEO

ECO

C(cont)

CE(sat)

CE(sat)

> -100V

> -7V

= 2A

< -130mV @ -1A

= 100mV

Description

Packaged in the SOT223 outline this new low saturation PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC
circuits and various driving and power management functions.

Features

• High Gain

• Low saturation voltage

• High peak current

Applications

• High side driver

• Motor drive

• Load disconnect switch

Ordering information

Device Reel size

(inches)

ZXTP19100CGTA 7 12 1000

Tape width

(mm)

Quantity

per reel

Device marking

ZXTP19100C

Issue 1- February 2008 1 www.zetex.com

© Zetex Semiconductors plc 2008

ZXTP19100CG

Absolute maximum ratings

Parameter Symbol Limit Unit

Collector-Base voltage V

Collector-Emitter voltage (forward blocking) V

Collector-Emitter voltage V

Emitter-Collector voltage (reverse blocking) V

Emitter-Base voltage V

Continuous Collector current

(c)

CBO

CEX

CEO

ECO

EBO

I

Base current I

Peak pulse current I

Power dissipation at T

=25°C

A

(a)

CM

P

Linear derating factor

Power dissipation at T

=25°C

A

(b)

P

Linear derating factor

Power dissipation at T

=25°C

A

(c)

P

Linear derating factor

Power dissipation at T

=25°C

A

(d)

P

Linear derating factor

Power dissipation at T

=25°C

C

(e)

P

Linear derating factor

Operating and storage temperature range Tj, T

C

B

D

D

D

D

D

stg

-110 V

-110 V

-100 V

-7 V

-7 V

-2 A

-1 A

-3 A

1.2

9.6

1.6

12.8

3.0

24

5.3

42

10.2

81

-55 to 150

W

mW/°C

W

mW/°C

W

mW/°C

W

mW/°C

W

mW/°C

°C

Thermal resistance

Parameter Symbol Limit Unit

Junction to ambient

Junction to ambient

Junction to ambient

Junction to ambient

Junction to case

NOTES:

(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in

still air conditions.
(b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(d) As (c) above measured at t<5 seconds.
(e) Junction to case (collector tab). Typical

(a)

(b)

(c)

(d)

(e)

Issue 1- February 2008 2 www.zetex.com

© Zetex Semiconductors plc 2008

R

R

R

R

R

UJA

UJA

UJA

UJA

UJC

104 °C/W

78 °C/W
42 °C/W

23.5 °C/W

12.3 °C/W

Thermal characteristics

90 100 110 120

1µ

10µ

100µ

1m

100m 1 10 100

10m

100m

1

Safe Operating Area

see note (c)

Single Pulse

T

amb

=25°C

V

CE(sat)

Limited

100µs

1ms

10ms

100ms

1s

DC

Safe Operating Area

-I

C

Collector Current (A)

-VCE Collector-Emitter Voltage (V)

0 20 4 0 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

see note (c)

see note (b)

see note (a)

Derating Curve

Temperature (°C)

Max Power Dissipation (W)

100µ 1m 10m 100m 1 10 1 00 1k

0

10

20

30

40

T

amb

=25°C

see note (c)

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s)

100µ 1m 10m 100m 1 10 1 00 1k

1

10

100

Single Pulse

T

amb

=25°C

see note (c)

Pulse Power Dissipation

Pulse Width (s)

Maximum Power (W)

BV

(BR)CEX

=110V

BV

(BR)CEO

=100V

Failure may occur

in this region

T

amb

=25°C

-VCE Collector-Emitter Voltage (V)

- I

C

Collector Current (A)

ZXTP19100CG

Issue 1- February 2008 3 www.zetex.com

© Zetex Semiconductors plc 2008