ZXTP19060CG
C
E
C
B
Pinout - top view
60V PNP medium transistor in SOT223
Summary
BV
BV
I
V
R
PD = 3.0W
Complementary part number ZXTN19060CG
CEO
ECO
C(cont)
CE(sat)
CE(sat)
> -60V
> -7V
= 5A
< -80mV @ -1A
= 50mV
Description
Packaged in the SOT223 outline this new low saturation PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC
circuits and various driving and power management functions.
Features
• High Gain
• Low saturation voltage
• High peak current
• 7V reverse blocking voltage
Applications
• High side driver
• Motor drive
• Load disconnect switch
Ordering information
Device Reel size
(inches)
ZXTP19060CGTA 7 12 1000
Tape width
(mm)
Quantity
per reel
Device marking
ZXTP19060C
Issue 1- February 2008 1 www.zetex.com
© Zetex Semiconductors plc 2008
ZXTP19060CG
Absolute maximum ratings
Parameter Symbol Limit Unit
Collector-Base voltage V
Collector-Emitter voltage V
Emitter-Collector voltage (reverse blocking) V
Emitter-Base voltage V
Continuous Collector current
(c)
CBO
CEO
ECX
EBO
I
Base current I
Peak pulse current I
Power dissipation at T
=25°C
A
(a)
CM
P
Linear derating factor
Power dissipation at T
=25°C
A
(b)
P
Linear derating factor
Power dissipation at T
=25°C
A
(c)
P
Linear derating factor
Power dissipation at T
=25°C
A
(d)
P
Linear derating factor
Power dissipation at T
=25°C
C
(e)
P
Linear derating factor
Operating and storage temperature range Tj, T
C
B
D
D
D
D
D
stg
-60 V
-60 V
-7 V
-7 V
-5 A
-1 A
-7 A
1.2
9.6
1.6
12.8
3.0
24
5.3
42
10.2
81
-55 to 150
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
Junction to ambient
Junction to ambient
Junction to ambient
Junction to case
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(d) As (c) above measured at t<5 seconds.
(e) Junction to case (collector tab). Typical
(a)
(b)
(c)
(d)
(e)
R
R
R
R
R
UJA
UJA
UJA
UJA
UJC
104 °C/W
78 °C/W
42 °C/W
23.5 °C/W
12.3 °C/W
Issue 1- February 2008 2 www.zetex.com
© Zetex Semiconductors plc 2008
Thermal characteristics
100m 1 10
10m
100m
1
10
Single Pulse. T
amb
=25°C
See note (c)
V
CE(sat)
Limit
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
-I
C
Collector Current (A)
-VCE Collector-Emitter Voltage (V)
0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
See note (c)
See note (b)
See note (a)
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
See note (c)
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse. T
amb
=25°C
See note (c)
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
ZXTP19060CG
Issue 1- February 2008 3 www.zetex.com
© Zetex Semiconductors plc 2008