Diodes ZXTP19060CG User Manual

ZXTP19060CG
C
E
B
C
E
C
B
Pinout - top view
60V PNP medium transistor in SOT223
Summary
BV
BV
I
V
R
PD = 3.0W
Complementary part number ZXTN19060CG
CEO
ECO
C(cont)
CE(sat)
CE(sat)
> -60V
= 5A
< -80mV @ -1A
= 50mV
Description
Packaged in the SOT223 outline this new low saturation PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
Features
High Gain
Low saturation voltage
High peak current
7V reverse blocking voltage
Applications
High side driver
Motor drive
Load disconnect switch
Ordering information
Device Reel size
(inches)
ZXTP19060CGTA 7 12 1000
Tape width
(mm)
Quantity
per reel
Device marking
ZXTP19060C
Issue 1- February 2008 1 www.zetex.com
© Zetex Semiconductors plc 2008
ZXTP19060CG
Absolute maximum ratings
Parameter Symbol Limit Unit
Collector-Base voltage V
Collector-Emitter voltage V
Emitter-Collector voltage (reverse blocking) V
Emitter-Base voltage V
Continuous Collector current
(c)
CBO
CEO
ECX
EBO
I
Base current I
Peak pulse current I
Power dissipation at T
=25°C
A
(a)
CM
P
Linear derating factor
Power dissipation at T
=25°C
A
(b)
P
Linear derating factor
Power dissipation at T
=25°C
A
(c)
P
Linear derating factor
Power dissipation at T
=25°C
A
(d)
P
Linear derating factor
Power dissipation at T
=25°C
C
(e)
P
Linear derating factor
Operating and storage temperature range Tj, T
C
B
D
D
D
D
D
stg
-60 V
-60 V
-7 V
-7 V
-5 A
-1 A
-7 A
1.2
9.6
1.6
12.8
3.0
24
5.3
42
10.2
81
-55 to 150
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
Junction to ambient
Junction to ambient
Junction to ambient
Junction to case
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions. (b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t<5 seconds. (e) Junction to case (collector tab). Typical
(a)
(b)
(c)
(d)
(e)
R
R
R
R
R
UJA
UJA
UJA
UJA
UJC
104 °C/W
78 °C/W 42 °C/W
23.5 °C/W
12.3 °C/W
Issue 1- February 2008 2 www.zetex.com
© Zetex Semiconductors plc 2008
Thermal characteristics
100m 1 10
10m
100m
1
10
Single Pulse. T
amb
=25°C
See note (c)
V
CE(sat)
Limit
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
-I
C
Collector Current (A)
-VCE Collector-Emitter Voltage (V)
0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
See note (c)
See note (b)
See note (a)
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
See note (c)
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse. T
amb
=25°C
See note (c)
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
ZXTP19060CG
Issue 1- February 2008 3 www.zetex.com
© Zetex Semiconductors plc 2008
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